US 2021/0202702 A1 · METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS

Abstract

Embodiments of the disclosure provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a method for processing a substrate in a processing region of a process chamber is provided. The method includes generating and flowing plasma species from a remote plasma source to a delivery member having a longitudinal passageway, flowing plasma species from the longitudinal passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are substantially eliminated from the plasma species before entering the processing region of the process chamber, and selectively incorporating atomic radicals from the plasma species in silicon or polysilicon regions of the substrate.

Claims20

Dependent claims

A method for processing a substrate in a processing region of a process chamber, comprising:

generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe comprising:
a mounting sleeve comprising a hollow body defining the longitudinally extending sleeve passageway, a first end connecting to a gas outlet of the remote plasma source and a second end opposing the first end, and
an inlet member connecting to the second end of the mounting sleeve, the inlet member comprising a hollow body defining the longitudinally extending inlet passageway;
and
flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to a longitudinal axis of the inlet port into the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber.

2 more elements

A method for processing a substrate in a processing region of a process chamber, comprising:

generating and flowing plasma species from a remote plasma source to a delivery pipe having a passageway comprising a longitudinally extending sleeve passageway and a longitudinally extending inlet passageway, the delivery pipe comprising:
a mounting sleeve comprising a hollow body defining the longitudinally extending sleeve passageway, a first end connecting to a gas outlet of the remote plasma source and a second end, and
an inlet member connecting to the second end of the mounting sleeve, the inlet member comprising a hollow body defining the longitudinally extending inlet passageway;
and
flowing plasma species from the passageway to an inlet port formed in a sidewall of the process chamber, the inlet port have an interior surface, wherein the plasma species are flowed at an angle of about 10 degrees to about 70 degrees with respect to a longitudinal axis of the inlet port into the inlet port, the plasma species colliding with the interior surface of the inlet port to promote collision of ions or reaction of ions with electrons or charged particles in the plasma species such that ions are eliminated from the plasma species before entering the processing region of the process chamber.

2 more elements

Dependencies are inferred from the claim text.

Method and apparatus for selective nitridation process

Life of this patent

Method and apparatus for selective nitridation process

Life of this patent

Abstract

Claims20