Line-Shaped Memory and Method Forming Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Tzu Lin, Kuo-Chyuan Tzeng, Kao-Chao Lin, Chang-Chih Huang
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Abstract
A device includes a first plurality of conductive strips have lengthwise directions in a first direction, a selector array overlapping the first plurality of conductive strips, an electrode array overlapping the selector array, a plurality of memory strips over the electrode array, and a second plurality of conductive strips overlapping the plurality of memory strips. The plurality of memory strips and the second plurality of conductive strips have lengthwise directions in a second direction perpendicular to the first direction.
Claims20
A method comprising:
- depositing a first electrode layer;
- depositing a first selector layer over the first electrode layer;
- forming a second electrode layer over the first selector layer;
- performing a first patterning process, wherein the first electrode layer, the first selector layer, and the second electrode layer are patterned as first electrode strips, first selector strips, and second electrode strips, respectively;
- depositing a memory layer over the second electrode strips;
- depositing a third electrode layer over the memory layer;
- and
- performing a second patterning process, wherein the third electrode layer and the memory layer are patterned as third electrode strips and memory strips, respectively, wherein the second electrode strips and the first selector strips are patterned as a first electrode array and a first selector array, respectively, and wherein each of the memory strips overlaps a plurality of selectors in the first selector array.
A device comprising:
- a first plurality of conductive strips have lengthwise directions in a first direction;
- a first selector array overlapping the first plurality of conductive strips;
- a first electrode array overlapping the first selector array;
- a first plurality of memory strips over the first electrode array;
- and
- a second plurality of conductive strips overlapping the first plurality of memory strips, wherein the first plurality of memory strips and the second plurality of conductive strips have lengthwise directions in a second direction perpendicular to the first direction, and wherein each of the first plurality of memory strips overlaps a plurality of selectors in the first selector array.
A device comprising:
- a first array of electrodes;
- a first plurality of memory strips, each overlapping a column of the first array of electrodes;
- a first plurality of conductive strips, each overlapping and contacting one of the first plurality of memory strips;
- a second array of electrodes overlapping the first plurality of conductive strips;
- a second plurality of memory strips over the second array of electrodes, wherein each of the second plurality of memory strips overlaps a plurality of electrodes in a row of the second array of electrodes;
- and
- a second plurality of conductive strips, each overlapping one of the second plurality of memory strips.
Dependencies are inferred from the claim text.