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US 2021/0202541 A1Published application
Display Apparatus
AssigneeLG Display Co., Ltd.
InventorHyunsoo LIM
Life of this patent
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Abstract
The present disclosure provides a display device comprising: a first thin film transistor including a first semiconductor pattern disposed on a substrate and comprising poly-silicon, and a first gate electrode; a middle layer on the first gate electrode; a second thin film transistor including a second semiconductor pattern disposed on the middle layer and comprising an oxide semiconductor, and a second gate electrode; and a storage capacitor including first to fourth storage electrodes overlapping with each other.
Claims20
A display device comprising:
- a first thin film transistor including a first semiconductor pattern disposed on a substrate and comprising poly-silicon, a first gate electrode overlapping the first semiconductor pattern with a first gate insulation layer interposed therebetween, and a first source electrode and a first drain electrode connected to the first semiconductor pattern;
- a middle layer on the first gate electrode;
- a second thin film transistor including a second semiconductor pattern disposed on the middle layer and comprising an oxide semiconductor, a second source electrode and a second drain electrode on the second semiconductor pattern, and a second gate electrode overlapping the second source electrode and the second drain electrode with a second gate insulation layer therebetween;
- and
- a storage capacitor including a first storage electrode disposed on a same layer and made of a same material as the first semiconductor pattern, a second storage electrode made of a same material as the first gate electrode and overlapping the first storage electrode with the first gate insulation layer interposed therebetween, a third storage electrode made of a same material as the second semiconductor pattern and overlapping the second storage electrode with the middle layer interposed therebetween, and a fourth storage electrode made of a same material as the second gate electrode and overlapping the third storage electrode with the second gate insulation layer interposed therebetween.
2 more elements
A display device comprising:
- a first thin film transistor including a first semiconductor pattern disposed on a substrate and including a first semiconductor, a first gate electrode overlapping the first semiconductor pattern with a first gate insulation layer interposed therebetween, and a first source electrode and a first drain electrode connected to the first semiconductor pattern;
- a middle layer on the first gate electrode;
- a second thin film transistor including a second semiconductor pattern disposed on the middle layer and including a second semiconductor different from the first semiconductor, a second source electrode and a second drain electrode on the second semiconductor pattern, and a second gate electrode overlapping the second source electrode and the second drain electrode with a second gate insulation layer therebetween;
- and
- a storage capacitor including a first storage electrode disposed on a same layer and made of a same material as the first semiconductor pattern, a second storage electrode made of a same material as the first gate electrode and overlapping the first storage electrode with the first gate insulation layer interposed therebetween, a third storage electrode made of a same material as the second semiconductor pattern and overlapping the second storage electrode with the middle layer interposed therebetween, and a fourth storage electrode made of a same material as the second gate electrode and overlapping the third storage electrode with the second gate insulation layer interposed therebetween.
2 more elements
Dependencies are inferred from the claim text.