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US 2021/0202525 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeSK hynix Inc.
InventorsKi Hong LEE, Seung Ho PYI, Seung Jun LEE
Life of this patent
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Abstract
A semiconductor device includes a first stacked structure having first conductive layers and first insulating layers formed alternately with each other, first semiconductor patterns passing through the first stacked structure, a coupling pattern coupled to the first semiconductor patterns, and a slit passing through the first stacked structure and the coupling pattern.
Claims18
A method of manufacturing a semiconductor device, the method comprising:
- forming a sacrificial pattern;
- forming a first stacked structure over the sacrificial pattern, wherein the first stacked structure includes first material layers and second material layers formed alternately with each other;
- forming first openings passing through the first stacked structure;
- removing the sacrificial pattern through the first openings to form a second opening;
- forming a multilayer dielectric layer in the first and second openings to fill the second opening;
- and
- forming first semiconductor patterns in the first openings.
4 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first stacked structure;
- forming a first semiconductor pattern passing through the first stacked structure;
- forming a sacrificial pattern on the first semiconductor pattern;
- forming a second stacked structure over the sacrificial pattern;
- forming a first opening passing through the second stacked structure;
- removing the sacrificial pattern through the first opening to form a second opening;
- forming a dielectric layer in the first opening and the second opening;
- forming a second semiconductor pattern in the first opening;
- forming a slit passing through the second stacked structure, the dielectric layer and the first stacked structure;
- etching the dielectric layer to form a third opening, the third opening exposing the first semiconductor pattern and the second semiconductor pattern;
- and
- forming a coupling pattern in the third opening.
9 more elements
A method of manufacturing a semiconductor device, the method comprising:
- forming a first stacked structure;
- forming a first polysilicon layer passing through the first stacked structure;
- forming a sacrificial pattern on the first polysilicon layer;
- forming a second stacked structure over the sacrificial pattern;
- forming a first opening passing through the second stacked structure;
- removing the sacrificial pattern through the first opening to form a second opening;
- forming a dielectric layer in the first opening and the second opening;
- forming a second polysilicon layer in the first opening;
- forming a slit passing through the second stacked structure, the dielectric layer and the first stacked structure;
- etching the dielectric layer to form a third opening, the third opening exposing the first polysilicon layer and the second polysilicon layer;
- and
- forming a coupling pattern in the third opening.
9 more elements
Dependencies are inferred from the claim text.