Back gates and related apparatuses, systems, and methods
AssigneeMicron Technology, Inc.
InventorsAndrew Bicksler, Marc Aoulaiche, Albert Fayrushin
Life of this patent
Estimating the term…
Abstract
Back gates and related apparatuses, systems, and methods are disclosed. An apparatus includes a channel material including a first side and a second side opposite the first side. The apparatus also includes word lines comprising electrically conductive material spaced along the first side of the channel material. The apparatus further includes a back gate comprising electrically conductive material proximate to the second side of the channel material. A method includes biasing a bit line and a word line associated with a memory cell according to a memory operation, and biasing the back gate while biasing the bit line and the word line.
Claims26
An apparatus, comprising:
- a channel material comprising a first side and a second side opposite the first side;
- word lines comprising electrically conductive material spaced along the first side of the channel material;
- a back gate comprising electrically conductive material proximate to the second side of the channel material;
- a bit line comprising electrically conductive material, a first end of the channel material electrically connected to the bit line;
- and
- a source region, a second end of the channel material electrically connected to the source region,
- wherein the back gate is one of:
- electrically connected to the bit line,
- electrically connected to the source region, or
- configured to electrically float.
(canceled)
An apparatus, comprising:
- a channel material;
- a first insulator comprising an electrically insulating material extending proximate to a first side of the channel material;
- word lines comprising electrically conductive material, the word lines on or in the first insulator;
- a second insulator comprising an electrically insulating material extending proximate to a second side of the channel material opposite the first insulator;
- and
- a back gate on or in the second insulator
- wherein the back gate is one of:
- electrically connected to a bit line,
- electrically connected to a source region, or
- configured to electrically float.
A method of accessing a memory cell, the method comprising:
- biasing a bit line and a word line associated with the memory cell according to a memory operation, word lines including the word line spaced along a first side of a channel material;
- and
- biasing a back gate proximate to a second side of the channel material opposite the first side of the channel material while biasing the bit line and the word line and the back gate is electrically connected to the bit line, is electrically connected to a source region at an end of the channel material, or is electrically floating.
A computing system, comprising:
- a memory device including a plurality of pillars, at least some of the plurality of pillars including:
- a channel material;
- word lines spaced proximate to a first side of the channel material;
- a back gate proximate to a second side of the channel material, the second side opposite the first side;
- a bit line at a first end of the channel material;
- and
- a source region at a second end of the channel material, the second end opposite the first end,
- wherein the back gate is one of:
- electrically connected to the bit line,
- electrically connected to the source region, or
- configured to electrically float.
Dependencies are inferred from the claim text.