Microelectronic devices and memory devices

A memory device, comprising:

• memory cells operably coupled to digit lines and word lines;
• and
• a memory controller operably coupled to the memory cells and comprising a sense device comprising:
• a transistor;
• a source contact structure in contact with a source region of the transistor;
• and
• a drain contact structure in contact with a drain region of the transistor, the drain contact structure having a length greater than or equal to a length of the source contact structure.

A microelectronic device, comprising:

• two transistors neighboring one another in a first horizontal direction, each of the two transistors comprising:
• a source region shared by the two transistors;
• a drain region not shared by the two transistors;
• a channel region interposed between the source region and the drain region in the first horizontal direction;
• and
• a gate structure vertically overlying the channel region;
• a source contact structure in contact with the source region shared by the two transistors;
• and
• two drain contact structures coupled to the two transistors and aligned with the source contact structure in a second horizontal direction orthogonal to the first horizontal direction, each of the two drain contact structures having a horizontal area greater than or equal to a horizontal area of the source contact structure.