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US 2021/0202307 A1Published application
Metal interconnect structure and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsDa-Jun Lin, Bin-Siang Tsai
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a dielectric layer on a substrate; forming a trench in the dielectric layer; forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy; forming a metal layer on the first liner; and planarizing the metal layer and the first liner to form a metal interconnection.
Claims11
A method for fabricating semiconductor device, comprising:
- forming a dielectric layer on a substrate;
- forming a trench in the dielectric layer;
- forming a first liner in the trench, wherein the first liner comprises Co—Ru alloy;
- forming a metal layer on the first liner;
- and
- planarizing the metal layer and the first liner to form a metal interconnection.
3 more elements
Dependencies are inferred from the claim text.