Method for forming semiconductor device having isolation structures with different thicknesses
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsCheng-Ta WU, Chii-Ming WU, Sen-Hong SYUE, Cheng-Po CHAU
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Abstract
A method includes forming a first trench in a semiconductor substrate. A mask is filled in the first trench and over the semiconductor substrate. After filling the mask in the first trench, the mask is patterned to form an opening in the mask. A second trench is formed in the semiconductor substrate. A depth of the second trench is different from a depth of the first trench. After forming the second trench in the semiconductor substrate, the mask is removed. A dielectric material is filled in both the first and second trenches.
Claims20
A method comprising:
- forming a first trench in a semiconductor substrate;
- filling a mask in the first trench and over the semiconductor substrate;
- after filling the mask in the first trench, patterning the mask to form an opening in the mask;
- forming a second trench in the semiconductor substrate, wherein a depth of the second trench is different from a depth of the first trench;
- after forming the second trench in the semiconductor substrate, removing the mask;
- and
- filling a dielectric material in both the first and second trenches.
A method comprising:
- forming a first trench and a second trench in a semiconductor substrate;
- forming a first mask over the semiconductor substrate, wherein the first mask is disposed in a first portion of the first trench and exposes the second trench and a second portion of the first trench;
- after forming the first mask, deepening the second trench and the second portion of the first trench;
- after deepening the second trench and the second portion of the first trench, removing the first mask;
- and
- after removing the first mask, filling a dielectric material in both the first and second trenches.
A method comprising:
- forming a first trench and a second trench in a semiconductor substrate, wherein the second trench is deeper than the first trench;
- filling a dielectric material in both the first and second trenches;
- forming a first mask over a first portion of the dielectric material in the second trench and exposing a second portion of the dielectric material in the first trench;
- and
- recessing the second portion of the dielectric material in the first trench by using the first mask as an etch mask.
Dependencies are inferred from the claim text.