Plasma processing method, plasma processing apparatus and method of manufacturing semiconductor device using the apparatus

A plasma processing apparatus, comprising;

• a chamber;
• a substrate stage configured to support a substrate within the chamber, the substrate stage including a lower electrode;
• an upper electrode disposed over the lower electrode to face the substrate;
• a plasma power supply configured to supply a plasma power to the upper electrode to form plasma within the chamber;
• a bias power supply configured to apply a bias power of a nonsinusoidal wave having a DC pulse portion and a ramp portion to the lower electrode in response to a bias control signal, the bias power supply including a DC power generator configured to generate a voltage function of the nonsinusoidal wave and a modulator configured to set a slope of the ramp portion and set a duration of the ramp portion to a cycle of the voltage function;
• and
• a controller configured to determine the slope of the ramp portion and the duration ratio of the ramp portion in order to control an ion energy distribution generated at a surface of the substrate and to output the bias control signal to the bias power supply corresponding to the bias power of the determined nonsinusoidal wave.