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AssigneeSamyoung Pure Chemicals Co., Ltd.
InventorsYOUNGCHAN KIM, YOUNGTAK KIM, JUNGAH KIM, HOON HAN, GEUNJOO BAEK, CHISUNG IHN, SANGMOON YUN
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Etchant compositions described herein include etchant compositions for etching a silicon film and may include nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water. The nitrogen compound may include fluorine (F), phosphorus (P), and/or carbon (C). Also described are methods of manufacturing an integrated circuit (IC) device. The methods may include providing a structure in which a silicon film doped at a first dopant concentration and an epitaxial film doped at a second dopant concentration are stacked. The second dopant concentration may be different from the first dopant concentration. The silicon film may be selectively etched from the structure by using an etchant composition.
An etchant composition comprising nitric acid, fluoric acid, phosphoric acid, acetic acid, a nitrogen compound, and water, wherein the nitrogen compound comprises fluorine (F), phosphorus (P), and/or carbon (C).
An etchant composition comprising nitric acid in an amount of 10% to 20% by weight of the etchant composition, fluoric acid in an amount of 1% to 15% by weight of the etchant composition, phosphoric acid in an amount of 5% to 30% by weight of the etchant composition, acetic acid in an amount of 10% to 50% by weight of the etchant composition, a nitrogen compound in an amount of 0.5% to 10% by weight of the etchant composition, and a residual amount of water, wherein the nitrogen compound comprises fluorine (F), phosphorus (P), and/or carbon (C).
An etchant composition for etching a doped silicon film, the etchant composition comprising nitric acid in an amount of 10% to 20% by weight of the etchant composition, fluoric acid in an amount of 1% to 15% by weight of the etchant composition, phosphoric acid in an amount of 5% to 30% by weight of the etchant composition, acetic acid in an amount of 10% to 50% by weight of the etchant composition, a nitrogen compound in an amount of 0.5% to 10% by weight of the etchant composition, and a residual amount of water,
21-40. (canceled)
Dependencies are inferred from the claim text.