Semiconductor Device Having Hydrogen in a Dielectric Layer

A method, comprising:

• forming a dielectric structure over a channel region of an active area, wherein the dielectric structure includes an interfacial layer over the active area and a dielectric layer over the interfacial layer;
• annealing the dielectric structure at a first pressure to introduce hydrogen to the dielectric layer and the interfacial layer;
• performing a post-anneal treatment on the dielectric structure at a second pressure to cause hydrogen in the dielectric layer to diffuse into the interfacial layer, wherein the first pressure is higher than the second pressure;
• and
• after performing the post-anneal treatment, forming a gate electrode over the dielectric layer.

A method of forming a semiconductor device, the method comprising:

• forming a first dielectric layer over a channel region;
• forming a second dielectric layer over the first dielectric layer;
• after forming the first dielectric layer and the second dielectric layer, introducing hydrogen to the first dielectric layer and the channel region, the first dielectric layer and the second dielectric layer having a first ratio of peak concentrations of hydrogen in the first dielectric layer to the second dielectric layer;
• after introducing hydrogen, increasing the first ratio of peak concentrations of hydrogen in the first dielectric layer to the second dielectric layer;
• and
• forming a gate electrode over the second dielectric layer.