Graded hardmask interlayer for enhanced extreme ultraviolet performance
AssigneeInternational Business Machines Corporation
InventorsJennifer Church, Ekmini A. De Silva, Dario Goldfarb
Life of this patent
Estimating the term…
Abstract
A patterning stack and methods are provided for semiconductor processing. The method includes forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths, the second material configured to provide adhesion to photoresist materials. The method also includes depositing a photoresist layer over the graded hardmask. The method additionally includes patterning the photoresist layer. The method further includes etching the graded hardmask. The method also includes removing the photoresist layer
Claims20
A method for semiconductor processing, comprising:
- forming a graded hardmask, the graded hardmask including a first material and a second material with extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths;
- depositing a photoresist layer over the graded hardmask;
- patterning the photoresist layer;
- etching the graded hardmask;
- and
- removing the photoresist layer,
- wherein the graded hardmask includes the first material and gradients of the second material doped into the first material.
A method for semiconductor processing, comprising:
- forming a graded hardmask, including a first material and a second material with high extreme ultraviolet (EUV) absorption cross sections for absorption of EUV wavelengths;
- depositing a photoresist layer over the top surface of the hardmask;
- and
- patterning the photoresist layer with a dosage an EUV source to reduce scumming defectivity,
- wherein the graded hardmask includes the first material and gradients of the second material doped into the first material.
Dependencies are inferred from the claim text.