Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsTakayuki WASEDA, Takashi NAKAGAWA, Kimihiko NAKATANI, Motomu DEGAI, Takao IZAKI, Yoshitomo HASHIMOTO
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Abstract
There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
Claims20
A method of manufacturing a semiconductor device, comprising:
- (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate;
- and
- (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
A substrate processing apparatus comprising:
- a process chamber in which a substrate is processed;
- a hydrocarbon group-containing gas supply system configured to supply a hydrocarbon group-containing gas to the substrate in the process chamber;
- an oxygen- and hydrogen-containing gas supply system configured to supply an oxygen- and hydrogen-containing gas to the substrate in the process chamber;
- a temperature regulator configured to regulate a temperature of the substrate in the process chamber;
- and
- a controller configured to be capable of controlling the hydrocarbon group-containing gas supply system, the oxygen- and hydrogen-containing gas supply system, and the temperature regulator to perform a process in the process chamber, the process comprising:
- (a) modifying a surface of a first base exposed on a surface of the substrate to be terminated with a hydrocarbon group by supplying the hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate;
- and
- (b) selectively forming a film on a surface of the second base by supplying the oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
A non-transitory computer-readable recording medium recording a program that causes, by a computer, a substrate processing apparatus to perform a process in a process chamber of the substrate processing apparatus, the process comprising:
- (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base are exposed on the surface of the substrate;
- and
- (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
Dependencies are inferred from the claim text.