# US 2021/0202244 A1 · High-throughput multi-stage manufacturing platform and method for processing a plurality of substrates > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0202244 A1 - Document ID: US20210202244A1 - Status: Published application - Kind: A1 - Application number: 17/130,083 - Filed: 2020-12-22 - Published: 2021-07-01 - Earliest claimed: 2019-12-30 - Assignees: Tokyo Electron Limited - Applicants: Tokyo Electron Limited - Inventors: Kandabara N. Tapily - Web page: https://patentgrep.com/patent/US20210202244A1 ## CPC - H10P 14/61: using masks - H10P 14/6506: {Formation of intermediate materials} - H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)} - H10P 50/283: {by chemical means} - H10P 72/0468: {comprising a chamber adapted to a particular process} - H10P 72/3304: {characterised by movements or sequence of movements of transfer devices} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A high-throughput manufacturing platform and a method for processing semiconductor substrates using the platform. The platform includes a plurality of process modules that include a first process module configured for performing a blocking layer deposition process, a second process module configured for performing a film deposition process, and a third process module configured for performing an etch process, where the blocking layer deposition process requires a longer processing time for each substrate than the film deposition process and the etch process, and where the first process module is configured for simultaneously processing a greater number of substrates than the second and third process modules. A substrate metrology module is hosted on the platform, the substrate metrology module includes an inspection system operable for measuring data associated with an attribute of a substrate at least one of before or after the substrate is processed in a process module of the platform. ## Claims ### Claim 1 A manufacturing platform for fabrication of electronic devices on a plurality of substrates, the manufacturing platform comprising: a plurality of process modules hosted on the manufacturing platform, the plurality of process modules configured for manipulating materials on the plurality of substrates in processing steps as part of a processing sequence, the plurality of process modules including: a first process module configured for performing a blocking layer deposition process; a second process module configured for performing a film deposition process; a third process module configured for performing an etch process, wherein the blocking layer deposition process requires a longer processing time for each substrate than the film deposition process and the etch process, and wherein the first process module is configured for simultaneously processing a greater number of substrates than the second and third process modules; at least one substrate metrology module hosted on the manufacturing platform, the substrate metrology module including an inspection system operable for measuring data associated with an attribute of a substrate at least one of before or after the substrate is processed in a process module of the manufacturing platform; and at least one substrate transfer system hosted on the manufacturing platform and configured for the movement of the plurality of substrates between the plurality of process modules and the at least one metrology module. ### Claim 2 (depends on 1) The platform of claim 1, further comprising at least one additional second process module for performing the film deposition process, at least one additional third process module for performing the etch process, or a combination thereof. ### Claim 3 (depends on 1) The platform of claim 1, wherein the first process module contains a showerhead configured for simultaneously exposing a first plurality of substrates to a reactant gas. ### Claim 4 (depends on 3) The platform of claim 3, wherein the showerhead further exposes the plurality of substrates to an isolation gas that provides an inert gas curtain between each of the first plurality of substrates. ### Claim 5 (depends on 1) The platform of claim 1, wherein the first process module contains a plurality of showerheads, wherein each showerhead is configured for exposing one of a first plurality of substrates to a reactant gas. ### Claim 6 (depends on 5) The platform of claim 5, wherein each showerhead further exposes the one of the first plurality of substrates to an isolation gas that provides an inert gas curtain between each of the first plurality of substrates. ### Claim 7 (depends on 1) The platform of claim 1, wherein the first process module contains a plurality of substrate holders, wherein each substrate holder is configured for supporting a substrate. ### Claim 8 (depends on 7) The platform of claim 7, wherein the plurality of substrate holders are configured for rotating the plurality of substrates. ### Claim 9 (depends on 1) The platform of claim 1, further comprising a fourth process module configured for removing the blocking layer from the plurality of substrates. ### Claim 10 (depends on 1) The platform of claim 1, wherein the blocking layer includes a self-assembled monolayer (SAM). ### Claim 11 A method for fabrication of electronic devices on a plurality of substrates in a manufacturing platform, the method comprising: providing a plurality of substrates in a plurality of process modules hosted on the manufacturing platform, the process modules configured for manipulating materials on the plurality of substrates in processing steps as part of a processing sequence; performing a blocking layer deposition process in a first process module; performing a film deposition process in a second process module; performing an etch process in a third process module, wherein the blocking layer deposition process requires a longer processing time for each substrate than the film deposition process and the etch process, and wherein the first process module is configured for simultaneously processing a greater number of substrates than the second and third process modules; performing substrate metrology on a substrate in a metrology module hosted on the manufacturing platform, the substrate metrology module including an inspection system operable for measuring data associated with an attribute of a substrate at least one of before or after the substrate is processed in a process module of the manufacturing platform; and using at least one substrate transfer system hosted on the manufacturing platform for the movement of the plurality of substrates between the plurality of process modules and the at least one metrology module. ### Claim 12 (depends on 11) The method of claim 11, wherein the manufacturing platform comprises at least one additional second process module for performing the film deposition process, at least one additional third process module for performing the etch process, or a combination thereof. ### Claim 13 (depends on 11) The method of claim 11, further comprising: simultaneously exposing a first plurality of substrates to the reactant gas using a showerhead in the first process module. ### Claim 14 (depends on 13) The method of claim 13, further comprising: exposing the first plurality of substrates to an isolation gas that provides an inert gas curtain between each of the first plurality of substrates. ### Claim 15 (depends on 11) The method of claim 11, wherein the first process module contains a plurality of showerheads, wherein each showerhead is configured for exposing one of the first plurality of substrates to a reactant gas. ### Claim 16 (depends on 15) The method of claim 15, wherein each showerhead further exposes the of the first plurality of substrates to an isolation gas that provides an inert gas curtain between each of the first plurality of substrates. ### Claim 17 (depends on 11) The method of claim 11, wherein the first process module contains a plurality of substrate holders, wherein each substrate holder is configured for supporting a substrate. ### Claim 18 (depends on 17) The method of claim 17, wherein the plurality of substrate holders are configured for rotating the plurality of substrates. ### Claim 19 (depends on 11) The method of claim 11, further comprising a fourth process module configured for removing the blocking layer from the plurality of substrates. ### Claim 20 (depends on 11) The method of claim 11, wherein the blocking layer includes a self-assembled monolayer (SAM).