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US 2021/0202241 A1Published application
Dielectric layer, interconnection structure using the same, and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Chen HO, You-Hua CHOU, Yen-Hao LIAO, Che-Lun CHANG, Zhen-Cheng WU
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Abstract
A structure includes a first dielectric film and a second dielectric film. The second dielectric film is formed on and in contact with the first dielectric film, in which a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.
Claims20
A structure, comprising:
- a first dielectric film;
- and
- a second dielectric film on and in contact with the first dielectric film, wherein a first pore is formed between the first dielectric film and the second dielectric film, and a thickness of the first dielectric film is smaller than a diameter of the first pore.
A structure, comprising:
- a filling material;
- a dielectric layer laterally surrounding the filling material;
- an etch stop layer over the dielectric layer and the filling material;
- a first dielectric monolayer extending along a top surface of the etch stop layer;
- a second dielectric monolayer over the first dielectric monolayer, wherein a first pore is formed between the first and second dielectric monolayers and has a diameter greater than a thickness of the second dielectric monolayer;
- and
- a conductive material extending through the first and second dielectric monolayers and landing on the filling material.
4 more elements
A structure, comprising:
- a substrate;
- and
- a dielectric layer over the substrate and comprising:
- a first dielectric film having a thickness in a range of from 0.05 nm to about 0.1 nm;
- a second dielectric film over and in contact with the first dielectric film;
- and
- a third dielectric film over and in contact with the second dielectric film, wherein the dielectric layer has a volume percentage porosity in a range from about 10% to about 75%.
4 more elements
Dependencies are inferred from the claim text.