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US 2021/0202240 A1Published application
Arrays of high-aspect-ratio germanium nanostructures with nanoscale pitch and methods for the fabrication thereof
AssigneeWisconsin Alumni Research Foundation
InventorsMax G. Lagally, Francesca Cavallo, Vijay Saradhi Mangu
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Abstract
Methods for fabricating thin, high-aspect-ratio Ge nanostructures from high-quality, single-crystalline Ge substrates are provided. Also provided are grating structures made using the methods. The methods utilize a thin layer of graphene between a surface of a Ge substrate, and an overlying resist layer. The graphene passivates the surface, preventing the formation of water-soluble native Ge oxides that can result in the lift-off of the resist during the development of the resist.
Claims10
A grating structure comprising:
- a substrate;
- and
- a plurality of single-crystalline germanium fins on a surface of the substrate, the germanium fins having widths in the range from 5 nm to 50 nm and aspect ratios in the range from 5 to 10.
A germanium fin field effect transistor comprising:
- a substrate;
- a plurality of germanium fins arranged in parallel along their lengths on a surface of the substrate, each fin in the plurality having a base, a top, and two opposing side-walls, wherein the germanium fins have widths in the range from 5 nm to 50 nm and aspect ratios in the range from 5 to 10;
- a dielectric material that provides lateral electrical isolation of the germanium fins;
- a gate wrapped around the top and the two opposing side-walls of each germanium fin;
- and
- a gate dielectric disposed between the gate and the germanium fins.
3 more elements
Dependencies are inferred from the claim text.