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US 2021/0202235 A1Published application
Low-K Feature Formation Processes and Structures Formed Thereby
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWan-Yi Kao, Chung-Chi Ko, Li Chun Te, Hsiang-Wei Lin, Te-En Cheng, Wei-Ken Lin, Guan-Yao Tu, Shu Ling Liao
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Abstract
Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.
Claims20
A method comprising:
- forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
- pulsing a silicon precursor onto a gate structure a first plurality of times;
- pulsing a carbon precursor onto the gate structure a second plurality of times;
- pulsing an oxygen precursor onto the gate structure a third plurality of times, at least two of the pulsing the oxygen precursors being performed at different flow rates;
- and
- pulsing a nitrogen precursor onto the gate structure a fourth plurality of times, at least two of the pulsing the nitrogen precursors being performed at different flow rates;
- and
- etching the low-k layer to form a spacer.
5 more elements
A method comprising:
- forming a low-k layer using an Atomic Layer Deposition (ALD) process, the low-k layer having a concentration of oxygen, a first concentration of nitrogen, and a concentration of carbon, the concentration of oxygen being greater than the first concentration of nitrogen, the first concentration of nitrogen being greater than the concentration of carbon, the ALD process comprising:
- for a cycle, flowing a carbon source precursor having an R functional group;
- and
- repeating the cycle a number of times.
1 more element
A method comprising:
- forming a low-k layer using an Atomic Layer Deposition (ALD) process, the ALD process comprising:
- individually pulsing precursors onto a gate structure a first time, the precursors comprising a silicon precursor, a carbon precursor, an oxygen precursor, and a nitrogen precursor;
- and
- individually pulsing the silicon precursor, the carbon precursor, the oxygen precursor, and the nitrogen precursor onto the gate structure a second time, wherein at least two flow rates of the precursors are modified between the first time and the second time;
- and
- etching the low-k layer to form a spacer.
3 more elements
Dependencies are inferred from the claim text.