Modified verify scheme for programming a memory apparatus

A controller in communication with a plurality of memory cells of a memory apparatus, the controller configured to:

• instruct the memory apparatus to perform a first programming stage including iteratively programming each of the plurality of memory cells to one of a plurality of first program states and verifying that one or more of the plurality of memory cells has a threshold voltage above one of a plurality of first verify voltages corresponding to the plurality of first program states and ending the first programming stage before all of the plurality of memory cells are verified thereby leaving a fraction of the plurality of memory cells below the one of a plurality of first verify voltages;
• and
• instruct the memory apparatus perform a second programming stage including iteratively programming each of the plurality of memory cells to one of a plurality of second program states and verifying that at least a predetermined number of the plurality of memory cells each has the threshold voltage above one of a plurality of second verify voltages corresponding to the plurality of second program states.

A method of operating a memory apparatus including a plurality of memory cells, the method comprising the steps of:

• performing a first programming stage including iteratively programming each of the plurality of memory cells to one of a plurality of first program states and verifying that one or more of the plurality of memory cells has a threshold voltage above one of a plurality of first verify voltages corresponding to the plurality of first program states and ending the first programming stage before all of the plurality of memory cells are verified thereby leaving a fraction of the plurality of memory cells below the one of a plurality of first verify voltages;
• and
• performing a second programming stage including iteratively programming each of the plurality of memory cells to one of a plurality of second program states and verifying that at least a predetermined number of the plurality of memory cells each has the threshold voltage above one of a plurality of second verify voltages corresponding to the plurality of second program states.