Apparatus for determining a pass voltage of a read operation

A memory, comprising:

• an array of memory cells comprising a plurality of strings of series-connected memory cells;
• and
• a controller configured to access the array of memory cells, wherein the controller is configured to:
• during a pre-charge portion of a particular read operation on the plurality of strings of series-connected memory cells having a first data age, determine a pass voltage for the first read operation;
• and
• during a pre-charge portion of a subsequent read operation on the plurality of strings of series-connected memory cells having a second data age, higher than the first data age, determine a pass voltage for the subsequent read operation.

A memory, comprising:

• an array of memory cells comprising a plurality of strings of series-connected memory cells;
• a plurality of access lines, wherein each access line of the plurality of access lines is connected to a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells;
• a plurality of data lines, wherein each data line of the plurality of data lines is selectively connected to a respective string of series-connected memory cells of the plurality of strings of series-connected memory cells;
• and
• a controller configured to access the array of memory cells;
• wherein the controller, during a particular read operation on the plurality of strings of series-connected memory cells, is configured to:
• apply a sequence of increasing voltage levels concurrently to each access line of the plurality of access lines, wherein each voltage level of the sequence of increasing voltage levels is higher than any previous voltage level of the sequence of increasing voltage levels and lower than any subsequent voltage level of the sequence of increasing voltage levels;
• determine a particular voltage level of the sequence of increasing voltage levels corresponding to a point at which all memory cells of the plurality of strings of series-connected memory cells are first deemed to be activated while applying the sequence of increasing voltage levels;
• cease applying the sequence of increasing voltage levels while continuing to apply the particular voltage level to each access line of the plurality of access lines;
• change the voltage level applied to the particular access line to a second voltage level lower than the particular voltage level while continuing to apply the particular voltage level to each remaining access line of the plurality of access lines;
• and
• sense a state of each data line of a subset of the plurality of data lines while applying the second voltage level to the particular access line.