Memory device including dynamic programming voltage

A memory device comprising:

• an array of memory cells;
• a first access line and a second access line;
• first memory cells associated with the first access line;
• second memory cells associated with the second access line;
• and
• a control unit including circuitry configured to:
• initiate applying a first voltage to the first access line;
• check first threshold voltages of at least a portion of the first memory cells after the first voltage is applied;
• obtain a first offset information based on a determination that at least one of the first threshold voltages is greater than a selected voltage;
• store the first offset information;
• initiate applying a second voltage to the second access line, the second voltage having a value based on the first offset information;
• check second threshold voltages of at least a portion of the second memory cells after the second voltage is applied;
• obtain a second offset information based on a determination that at least one of the second threshold voltages is greater than the selected voltage;
• and
• store the second offset information.

A method comprising:

• applying a first voltage to one of access lines of a memory device during a first operation performed on first memory cells of the memory device;
• determining a count value during the first operation, the count value corresponding to a number of memory cells among the first memory cells, each memory cell in the number of memory cells having a threshold voltage greater than a selected voltage;
• determining offset information based on the count value;
• generating a second voltage based on the offset information;
• and
• applying the second voltage to one of the access lines during a second operation performed on second memory cells of the memory device.

A method comprising:

• applying a first voltage to an access line among access lines of a memory device;
• checking first threshold voltages of first memory cells coupled to the access line after applying the first voltage;
• obtaining offset information based on a determination that at least one of the first threshold voltages is greater than a selected voltage;
• generating a second voltage, the second voltage being a function of the first voltage and an amount of voltage corresponding to the offset information;
• applying the second voltage to a selected access line among the access lines during an operation of storing information in second memory cells of the memory device;
• determining whether each memory cell of the second memory cells reaches a target threshold voltage after applying the second voltage;
• and
• completing the operation of storing information in the second memory cells based on a determination that each memory cell of the second memory cells reaches a target threshold voltage.