Responding to changes in available power supply

A memory, comprising:

• an array of non-volatile memory cells comprising a first pool of non-volatile memory cells and a second pool of non-volatile memory cells;
• and
• a controller for access of the array of non-volatile memory cells, wherein the controller is configured to cause the memory to:
• program non-volatile memory cells of the first pool of non-volatile memory cells at a first storage density;
• program non-volatile memory cells of the second pool of non-volatile memory cells at a second storage density greater than the first storage density;
• determine whether a value of an indication of available power of a power supply for the memory is less than a threshold and whether line-connected power is available to the power supply;
• and
• in response to determining that the value of the indication of available power is less than the threshold and that line-connected power is not available:
• increase a size of the first pool of non-volatile memory cells;
• limit non-volatile storage of data received by the memory to programming of the data received by the memory to non-volatile memory cells of the first pool of non-volatile memory cells at the first storage density;
• prohibit programming of the data received by the memory to non-volatile memory cells of the array of non-volatile memory cells at the second storage density;
• and
• prohibit movement of data from the first pool of non-volatile memory cells to the second pool of non-volatile memory cells.

An apparatus, comprising:

• a power supply;
• a first controller configured to receive power from the power supply and configured to receive a value of an indication of available power of the power supply;
• and
• a memory in communication with the first controller and configured to receive power from the power supply, wherein the memory comprises an array of memory cells and a second controller for accessing the array of memory cells;
• wherein the apparatus is configured to:
• program memory cells of the array of memory cells allocated to a first pool of memory cells of the array of memory cells using a first storage density;
• program memory cells of the array of memory cells allocated to a second pool of memory cells of the array of memory cells using a second storage density greater than the first storage density;
• determine whether the value of the indication of available power is less than a threshold and whether line-connected power is available to the power supply;
• and
• in response to determining that the value of the indication of available power is less than the threshold and determining that the line-connected power is not available to the power supply:
• allocate additional memory cells of the array memory cells to the first pool of memory cells;
• limit storage of data received by the memory to programming of the data received by the memory to memory cells allocated to the first pool of memory cells at the first storage density;
• prohibit programming of the data received by the memory to memory cells of the array of memory cells at the second storage density;
• and
• prohibit movement of data from the first pool of memory cells to the second pool of memory cells.