Programming nonvolatile memory cells through a series of predetermined threshold voltages

A programming method for a non-volatile memory, the non-volatile memory comprising a first memory cell connected to a first word line and a first column line, and a second memory cell connected to the first word line and a second column line, the programming method comprising:

• performing a first program loop including:
• applying a first program voltage to the first word line,
• applying a first column line voltage to the first column line, and
• applying a second column line voltage higher than the first column line voltage to the second column line, the first program voltage, first column line voltage, and second column line voltage all being applied at the same time;
• performing a second program loop including:
• applying a second program voltage different from the first program voltage to the first word line,
• applying a third column line voltage higher than the first column line voltage to the first column line, and
• applying a fourth column line voltage higher than the second column line voltage to the second column line, the second program voltage, third column line voltage, and fourth column line voltage all being applied at the same time;
• and
• performing a third program loop including:
• applying a third program voltage different from the second program voltage to the first word line, and
• at the same time, applying an inhibit column line voltage to the first column line and the second column line,
• wherein the third and the fourth column line voltages are lower than the inhibit column line voltage.

A programming method for a non-volatile memory, the non-volatile memory comprising, a first memory cell connected to a first word line and a first column line, and a second memory cell connected to the first word line and a second column line, the programming method comprising:

• performing a first program loop including:
• applying a first program voltage to the first word line,
• applying a first column line voltage to the first column line, and
• applying a second column line voltage higher than the first column line voltage to the second column line, the first program voltage, first column line voltage, and second column line voltage all being applied at the same time;
• and
• performing a second program loop including:
• applying a second program voltage different from the first program voltage to the first word line, and
• at the same time, applying a third column line voltage higher than the second column line voltage to the first column line;
• and
• performing a third program loop including:
• applying a third program voltage different from the second program voltage to the first word line, and
• at the same time, applying an inhibit column line voltage to the first column line and the second column line,
• wherein the third column line voltage is lower than the inhibit column line voltage.