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AssigneeNEC Corporation
InventorsToshitsugu SAKAMOTO, Naoki BANNO, Munehiro TADA, Yukihide TSUJI
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Provided are a rewrite method for a variable resistance element that increases a rewrite count, and a non-volatile storage device using the variable resistance element. In the rewrite method for the variable resistance element, a variable resistance layer is disposed between a first electrode and a second electrode, and a write voltage is applied between the first electrode and the second electrode, thereby causing the resistance between the first electrode and the second electrode to reversibly change. After writing to the variable resistance element, the variable resistance element is read, the read current is measured, the measured read current is compared with a reference current, a condition of the writing is changed on the basis of the comparison results, and thereafter writing to the variable resistance element is performed again.
A rewrite method for a variable resistance element in which a variable resistance layer is disposed between a first electrode and a second electrode, and a resistance between the first electrode and the second electrode is reversibly changed when a write voltage between the first electrode and the second electrode is applied, the rewrite method for the variable resistance element, comprising:
A non-volatile storage device using a variable resistance element, comprising:
Dependencies are inferred from the claim text.