Rram circuit and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Cheng CHOU, Zheng-Jun LIN, Pei-Ling TSENG
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Abstract
A method of forming a filament in a resistive random-access memory (RRAM) device includes applying a cell voltage across a resistive layer of the RRAM device, detecting an increase in a current through the resistive layer generated in response to the applied cell voltage, and in response to detecting the increase in the current, using a first switching device to reduce the current through the resistive layer.
Claims20
A method of forming a filament in a resistive random-access memory (RRAM) device, the method comprising:
- applying a cell voltage across a resistive layer of the RRAM device;
- detecting an increase in a current through the resistive layer generated in response to the applied cell voltage;
- and
- in response to the detecting the increase in the current, using a first switching device to reduce the current through the resistive layer.
A method of limiting a current, the method comprising:
- receiving a bias voltage at a gate of a first transistor and a gate of a second transistor;
- generating a voltage level by using the first and second transistors to conduct a first current received from a resistive random-access memory (RRAM) device;
- and
- in response to detecting an increase in the voltage level, reducing the first current through the RRAM device by switching off a switching device in series with the first transistor.
A method of programming a resistive random-access memory (RRAM) device, the method comprising:
- generating a cell current by applying a cell voltage across a resistive layer of the RRAM device;
- conducting the cell current through first and second parallel current paths, thereby generating a voltage level, wherein
- the first current path comprises a first transistor in series with a first switching device, and
- the second current path comprises a second transistor in series with a second switching device;
- and
- in response to detecting an increase in the voltage level, switching off the second switching device, thereby causing the first transistor to operate in a saturation region.
Dependencies are inferred from the claim text.