Semiconductor storage device
AssigneeKioxia Corporation
InventorMasaharu WADA
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a semiconductor storage device includes a first stacked portion including a first peripheral circuit and a second stacked portion above the first stacked portion. The second stacked portion including a memory cell, a word line connected to the memory cell, a bit line connected to the memory cell and the first peripheral circuit, and at least one of a second peripheral circuit connected to the bit line and a third peripheral circuit connected to the word line. The at least one of the second or third peripheral circuits including a field effect transistor having a channel layer containing an oxide semiconductor.
Claims20
A semiconductor storage device, comprising:
- a first stacked portion including a first peripheral circuit;
- and
- a second stacked portion above the first stacked portion and including a memory cell, a word line connected to the memory cell, a bit line connected to the memory cell and the first peripheral circuit, and at least one of a second peripheral circuit connected to the bit line or a third peripheral circuit connected to the word line, wherein
- the at least one of the second peripheral circuit or the third peripheral circuit includes a field effect transistor having a channel layer containing an oxide semiconductor.
A semiconductor storage device, comprising:
- a first stacked portion including a first peripheral circuit;
- and
- a second stacked portion above the first stacked portion and including a memory cell, a word line connected to the memory cell, a bit line connecting the memory cell and the first peripheral circuit, and at least one of a second peripheral circuit connected to the bit line or a third peripheral circuit connected to the word line, wherein
- the at least one of the second peripheral circuit or the third peripheral circuit includes a vertical field effect transistor with a channel layer comprising an oxide of indium and an oxide of at least one of gallium, zinc, or tin.
A semiconductor storage device, comprising:
- a first peripheral circuit in a first layer region;
- and
- a second layer region above the first layer region in a first direction, the second layer region including a memory cell array, a plurality of word lines connected to memory cells of the memory cell array, a plurality of bit lines connected to memory cells of the memory cell array, and a second peripheral circuit connected to the bit lines or the word lines, wherein
- the bit lines are connected to the first peripheral circuit, and
- the second peripheral circuit includes a field effect transistor including a channel layer comprising an oxide semiconductor material.
Dependencies are inferred from the claim text.