Balanced negative bitline voltage for a write assist circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Che TSAI, Chia-En HUANG, Chia-Cheng CHEN, Yih WANG
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Che TSAI, Chia-En HUANG, Chia-Cheng CHEN, Yih WANG
Estimating the term…
A circuit and method for establishing a balanced negative voltage to a near-end and far-end of a bitline having a plurality of memory cells connected to the bitline is disclosed. A MOS capacitor and a metal capacitor are connected in parallel. The MOS capacitor is connected to the near-end of the bitline through a first switch transistor. The metal capacitor is connected to the near-end of the bitline through the first switch transistor and the far end of the bitline through a second switch transistor. A falling negative boost voltage is applied to the MOS capacitor and the metal capacitor. When the switch transistors are turned on during a write operation, the MOS capacitor and the metal capacitor are both coupled to the voltage at the near-end and far-end and drive the voltage to approximately equal the boost voltage, thereby providing a balanced voltage to the bitline.
A write assist circuit, comprising:
A device comprising:
A method of establishing a balanced negative voltage to a near-end and far-end of a bitline, comprising:
Dependencies are inferred from the claim text.