Magnetic Sensor Array with Single TMR Film Plus Laser Annealing and Characterization
AssigneeWestern Digital Technologies, Inc.
InventorsYuankai ZHENG, Ming MAO, Daniele MAURI, Chih-Ching HU, Chen-Jung CHIEN
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AssigneeWestern Digital Technologies, Inc.
InventorsYuankai ZHENG, Ming MAO, Daniele MAURI, Chih-Ching HU, Chen-Jung CHIEN
Estimating the term…
The present disclosure generally relates to a Wheatstone bridge array that has four resistors. Each resistor includes a plurality of TMR films. Each resistor has identical TMR films. The TMR films of two resistors have reference layers that have an antiparallel magnetic orientation relative to the TMR films of the other two resistors. To ensure the antiparallel magnetic orientation, the TMR films are all formed simultaneously and annealed in a magnetic field simultaneously. Thereafter, the TMR films of two resistors are annealed a second time in a magnetic field while the TMR films of the other two resistors are not annealed a second time.
A tunnel magnetoresistive (TMR) sensor device, comprising:
A TMR sensor device, comprising:
A method of manufacturing a TMR sensor device, comprising:
Dependencies are inferred from the claim text.