Method of forming photoresist pattern
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Chung SU, Tsung-Han KO, Ching-Yu CHANG
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Abstract
A method of forming a photoresist pattern includes forming a protective layer over a photoresist layer formed on a substrate. The protective layer and the photoresist layer are selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer. The protective layer includes a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.
Claims20
A method of forming a photoresist pattern, comprising:
- forming a protective layer over a photoresist layer formed on a substrate;
- selectively exposing the protective layer and the photoresist layer to actinic radiation;
- and
- developing the photoresist layer to form a pattern in the photoresist layer,
- wherein the protective layer comprises a polymer without a nitrogen-containing moiety, and a basic quencher, an organic acid, a photoacid generator, or a thermal acid generator.
A method of forming a photoresist pattern, comprising:
- forming a photoresist layer comprising a photoresist composition over a substrate;
- forming a protective layer comprising a basic quencher over the photoresist layer;
- forming a latent pattern in the photoresist layer by selectively exposing the photoresist layer to actinic radiation;
- generating a base in the protective layer or diffusing base in the protective layer into the photoresist layer;
- removing the protective layer;
- and
- developing the photoresist layer to form a pattern in the photoresist layer.
A method of forming a photoresist pattern, comprising:
- forming a photoresist layer comprising a photoresist composition over a substrate;
- forming a protective layer comprising a polymer without a nitrogen-containing moiety, and an organic acid, a photoacid generator, or a thermal acid generator over the photoresist layer;
- forming a latent pattern in the photoresist layer by selectively exposing the photoresist layer to actinic radiation;
- generating an acid in the protective layer or diffusing acid in the protective layer into the photoresist layer;
- removing the protective layer;
- and
- developing the photoresist layer to form a pattern in the photoresist layer.
Dependencies are inferred from the claim text.