Chain scission resist compositions for euv lithography applications
AssigneeIntel Corporation
InventorsLauren Doyle, Marie Krysak, Patrick Theofanis, James Blackwell, Eungnak Han
Life of this patent
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Abstract
Chain scission resist compositions suitable for EUV lithography applications may include monomer functional groups that improve the kinetics and/or thermodynamics of the scission mechanism. Chain scission resists may include monomer functional groups that reduce the risk that leaving groups generated through the scission mechanism may chemically corrode processing equipment.
Claims21
A lithography resist composition, comprising a polymer including n repeat units of a monomer having the structural formula:
- wherein X is a halide, an alkyl halide, a tosylate group, a triflate group, or a triflimide group;
- and
- wherein Y is an aryl or aryl halide group at the end of an ester chain including one or more carbon atoms.
-3. (canceled)
(canceled)
A lithography resist composition, comprising a polymer including n repeat units of the monomer having the structural formula:
- wherein X is a tosylate group, a triflate group, or a triflimide group;
- and
- wherein Y is an aryl or trialkylsilyl group at the end of an ester chain including one or more carbon atom, or Y is an alkyl group, an alkyl halide, or an aryl halide.
Dependencies are inferred from the claim text.