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US 2021/0198787 A1Published application
Film forming method and system
AssigneeTokyo Electron Limited
InventorsYamato TONEGAWA, Jinseok KIM
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Abstract
A film forming method includes forming a thin film by executing a plurality of cycles each including supplying a raw material gas to a substrate, supplying a reaction gas capable of reacting with the raw material gas to the substrate, and processing the substrate with deuterium plasma.
Claims12
A film forming method, comprising:
- forming a thin film by executing a plurality of cycles each comprising:
- supplying a raw material gas to a substrate;
- supplying a reaction gas capable of reacting with the raw material gas to the substrate;
- and
- processing the substrate with deuterium plasma.
2 more elements
A system comprising:
- a film forming apparatus;
- and
- a controller,
- wherein the controller is configured to control the film forming apparatus so as to form a thin film on a substrate by executing a plurality of cycles each comprising:
- supplying a raw material gas to the substrate;
- supplying a reaction gas capable of reacting with the raw material gas to the substrate;
- and
- processing the substrate with deuterium plasma.
5 more elements
Dependencies are inferred from the claim text.