Semiconductor structure and manufacturing method thereof

A manufacturing method of a semiconductor structure, comprising:

• providing a first substrate having a first surface;
• forming a III-V etch stop layer over the first surface;
• forming a first semiconductor device over the III-V etch stop layer;
• and
• removing the first substrate by a selective etching operation and exposing a surface of the III-V etch stop layer, wherein the selective etching operation includes introducing an etchant selective to a material of the first substrate and stopping at a surface the III-V etch stop layer.

A method of fabricating a semiconductor device comprising:

• providing a first substrate;
• forming a III-V etch stop layer over the first substrate;
• forming a first device layer over the III-V etch stop layer, wherein the first device layer includes a transistor and a top surface of the first device layer includes a conductive trace pattern within a dielectric layer;
• providing a second substrate having a second device layer providing a top surface of another conductive trace pattern within another dielectric layer;
• bonding the first substrate and the second substrate by mating the conductive trace pattern and the top surface of the another conductive trace pattern;
• and
• after bonding the first substrate and the second substrate, selectively removing the first substrate and stopping at the III-V etch stop layer.

A method of fabricating a semiconductor device comprising:

• providing a first substrate;
• forming a III-V etch stop layer over the first substrate;
• growing a first device layer on the III-V etch stop layer;
• forming a transistor, a dielectric layer, and a conductive trace pattern over the first device layer;
• providing a second substrate having a bonding surface of another conductive trace pattern within another dielectric layer;
• bonding the conductive trace pattern and the dielectric layer to the bonding surface of the second substrate;
• and
• after bonding the first substrate and the second substrate, grinding the first substrate to remove a first portion of the first substrate;
• and
• after the grinding, performing a wet etching operation to remove a remaining portion of the first substrate and exposing the III-V etch stop layer.