Multilevel semiconductor device and structure with image sensors
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Deepak C. Sekar, Brian Cronquist
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Abstract
An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors and alignment marks; an overlaying oxide on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of first image sensors; and a third level overlaying the second level, where the third level includes a plurality of second image sensors, where the second level is aligned to the alignment marks, where the second level is bonded to the first level, and where the bonded includes an oxide to oxide bond.
Claims20
An integrated device, the device comprising:
- a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors and alignment marks;
- an overlaying oxide on top of said first level;
- a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
- wherein said second mono-crystal layer comprises a plurality of first image sensors;
- and
- a third level overlaying said second level,
- wherein said third level comprises a plurality of second image sensors,
- wherein said second level is aligned to said alignment marks,
- wherein said second level is bonded to said first level, and
- wherein said bonded comprises an oxide to oxide bond.
An integrated device, the device comprising:
- a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors and alignment marks;
- an overlaying oxide on top of said first level;
- a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
- wherein said second mono-crystal layer comprises a plurality of first image sensors;
- and
- a third level overlaying said second level,
- wherein said third level comprises a plurality of second image sensors, and
- wherein said second level is bonded to said first level.
An integrated device, the device comprising:
- a first level comprising a first mono-crystal layer, said first mono-crystal layer comprising a plurality of single crystal transistors and alignment marks;
- an overlaying oxide on top of said first level;
- a second level comprising a second mono-crystal layer, said second level overlaying said oxide,
- wherein said second mono-crystal layer comprises a plurality of first image sensors;
- and
- a third level overlaying said second level,
- wherein said third level comprises a plurality of second image sensors, and
- wherein said second level is bonded to said first level.
Dependencies are inferred from the claim text.