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US 2021/0179937 A1Published application
Quantum dot, light emitting material and manufacturing method of quantum dot
AssigneeChi Mei Corporation
InventorKeng-Chu Lin
Life of this patent
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Abstract
A quantum dot, a light emitting material, and a manufacturing method of quantum dot are provided. A ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×108 CPS/Abs. to 2.0×109 CPS/Abs. The characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot.
Claims16
A quantum dot, comprising an outer shell and an inner core from outside in, wherein the outer shell covers a surface of the inner core,
- the quantum dot has a ratio of an emission intensity to an absorption intensity of the quantum dot at a characteristic wavelength ranges from 1.5×108 CPS/Abs. to 2.0×109 CPS/Abs., wherein the characteristic wavelength is a shorter wavelength of two wavelengths corresponding to half of a maximum intensity of an emission peak of the quantum dot,
- wherein the inner core consists essentially of at least one element selected from the group consisting of zinc, cadmium, mercury, aluminum, gallium, indium, tin, and lead, and at least one element selected from the group consisting of arsenic, selenium, and tellurium.
Dependencies are inferred from the claim text.