# US 2021/0175271 A1 · Semiconductor device and method for forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0175271 A1 - Document ID: US20210175271A1 - Status: Published application - Kind: A1 - Application number: 16/707,617 - Filed: 2019-12-09 - Published: 2021-06-10 - Earliest claimed: 2019-12-09 - Assignees: Vanguard International Semiconductor Corporation - Applicants: Vanguard International Semiconductor Corporation - Inventors: Hsin-Hui LEE; Han-Liang TSENG; Hsueh-Jung LIN; Chin-Cheng LI - Web page: https://patentgrep.com/patent/US20210175271A1 ## CPC - H10F 39/8067: {Reflectors} - H10F 39/024: {of coatings or optical elements} - H10F 39/8057: {Optical shielding} - H10F 39/8063: {Microlenses} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION ## Abstract A semiconductor device includes a substrate and a light collimator layer. The substrate has a plurality of pixels. The light collimator layer is disposed on the substrate. The light collimator layer includes a light shielding layer disposed on the substrate, a plurality of transparent pillars disposed in the light shielding layer, and a plurality of optical microlenses disposed on the pixels. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate, wherein the substrate comprises a plurality of pixels; and a light collimator layer disposed on the substrate; wherein the light collimator layer comprises: a light shielding layer disposed on the substrate; a plurality of transparent pillars disposed in the light shielding layer, wherein the transparent pillars cover the pixels; and a plurality of optical microlenses disposed on the pixels. ### Claim 2 (depends on 1) The semiconductor device as claimed in claim 1, wherein the transparent pillars are located between the optical microlenses and the pixels. ### Claim 3 (depends on 2) The semiconductor device as claimed in claim 2, wherein the transparent pillars are formed of a first material, the optical microlenses are formed of a second material, and the first material is different from the second material. ### Claim 4 (depends on 3) The semiconductor device as claimed in claim 3, wherein a refractive index of the optical microlenses is greater than a refractive index of the transparent pillars. ### Claim 5 (depends on 3) The semiconductor device as claimed in claim 3, further comprising a transparent material layer disposed between the transparent pillars and the substrate. ### Claim 6 (depends on 5) The semiconductor device as claimed in claim 5, wherein the transparent material layer is formed of the first material. ### Claim 7 (depends on 1) The semiconductor device as claimed in claim 1, wherein the optical microlenses are located between the transparent pillars and the pixels. ### Claim 8 (depends on 7) The semiconductor device as claimed in claim 7, wherein the optical microlenses are located in the light shielding layer. ### Claim 9 (depends on 7) The semiconductor device as claimed in claim 7, wherein the transparent pillars are in direct contact with top surfaces of the optical microlenses. ### Claim 10 (depends on 9) The semiconductor device as claimed in claim 9, wherein the transparent pillars have concave bottom profiles. ### Claim 11 (depends on 7) The semiconductor device as claimed in claim 7, wherein the transparent pillars are formed of a first material, the optical microlenses are formed of a second material, and the first material is different from the second material. ### Claim 12 (depends on 11) The semiconductor device as claimed in claim 11, wherein the refractive index of the optical microlenses is greater than the refractive index of the transparent pillars. ### Claim 13 (depends on 11) The semiconductor device as claimed in claim 11, further comprising a transparent material layer disposed between the optical microlenses and the substrate. ### Claim 14 (depends on 13) The semiconductor device as claimed in claim 13, wherein the transparent material layer is formed of the first material. ### Claim 15 A method for forming a semiconductor device, comprising: providing a substrate, wherein the substrate comprises a plurality of pixels; forming a plurality of transparent pillars on the pixels; forming a light shielding layer on the substrate, wherein the light shielding layer surrounds the transparent pillars; and forming a plurality of optical microlenses on the pixels. ### Claim 16 (depends on 15) The method for forming a semiconductor device as claimed in claim 15, before the step of forming the transparent pillars, further comprising: forming a transparent material layer on the substrate, wherein the transparent pillars are formed on the transparent material layer. ### Claim 17 (depends on 15) The method for forming a semiconductor device as claimed in claim 15, wherein the optical microlenses are formed after the step of forming the transparent pillars, and the optical microlenses are formed on the transparent pillars. ### Claim 18 (depends on 15) The method for forming a semiconductor device as claimed in claim 15, wherein the optical microlenses are formed before the step of forming the transparent pillars, and the transparent pillars are formed on the optical microlenses. ### Claim 19 (depends on 18) The method for forming a semiconductor device as claimed in claim 18, wherein the light shielding layer surrounds the optical microlenses. ### Claim 20 (depends on 18) The method for forming a semiconductor device as claimed in claim 18, wherein the transparent pillars are in direct contact with the top surfaces of the optical microlenses, and the transparent pillars have concave bottom profiles.