# US 2021/0175014 A1 · High energy density dielectric layer

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- Number: US 2021/0175014 A1
- Document ID: US20210175014A1
- Status: Published application
- Kind: A1
- Application number: 16/870,226
- Filed: 2020-05-08
- Published: 2021-06-10
- Earliest claimed: 2017-04-20
- Inventors: L. Pierre de Rochemont
- Web page: https://patentgrep.com/patent/US20210175014A1

## CPC

- H01G 4/1209: {characterised by the ceramic dielectric material (H01G4/1272, H01G4/1281 take precedence)}
- H01G 4/012: Form of non-self-supporting electrodes
- H01G 4/1227: {based on alkaline earth titanates}
- H01G 4/30: Stacked capacitors (H01G4/33 takes precedence)
- H10D 1/682: {having dielectrics comprising perovskite structures}
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- Y02T 10/70: Energy storage systems for electromobility, e.g. batteries
- H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y02T: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION

## Abstract

A high energy density dielectric layer having relative dielectric permittivity greater than εR≥70 and thickness less than 1 micron that when formed between a primary electrode and the secondary electrode of a capacitor, wherein the high energy density dielectric has a dielectric polarization response that is determined solely by orbital deformations of the atomic species forming said high energy density dielectric.

## Claims

### Claim 1

A high energy density dielectric layer that polarizes and de-polarizes on femto-second second) time scales comprising:
a theoretically dense perovskite electroceramic further comprising a polycrystalline network of uniformly distributed grains having uniform grain size less than or equal to 50 nm, and,
an intra-granular crystalline lattice that has an average atomic mass unit (amu) greater than or equal to 25 amu.

### Claim 2 (depends on 1)

The high energy density dielectric layer as in claim 1, wherein the intra-granular crystalline lattice has an average atomic mass unit (amu) greater than or equal to 50 amu.

### Claim 3 (depends on 1)

The high energy density dielectric layer as in claim 1 that is compositionally complex.

### Claim 4 (depends on 3)

The high energy density dielectric layer as in claim 3 that comprises:
transition metal elements from the group consisting of: scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), zinc (Zn), yttrium (Y), zirconium (Zr), niobium (Nb), molybdenum (Mo), hafnium (Hf), tantalum (Ta), and tungsten (W).

### Claim 5 (depends on 4)

The high energy density dielectric layer as in claim 4 that further comprises:
lanthanide metal elements from the group consisting of: lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), and ytterbium (Yb).

### Claim 6 (depends on 1)

The perovskite ceramic as in claim 1 further comprising post transition metal elements from the group consisting of: indium (In), tin (Sn), lead (Pb), and bismuth (Bi).

### Claim 7 (depends on 1)

The high energy density dielectric layer as in claim 1, wherein the high energy dielectric layer has a relative permittivity, ER, greater than 200.

### Claim 8 (depends on 1)

The high energy density dielectric layer as in claim 1, wherein the theoretically dense polycrystalline network of uniformly distributed grains further comprises a grain boundary material that consists essentially of highly electrically insulating metal oxide phases formed with silicon dioxide.

### Claim 9 (depends on 8)

The grain boundary material as in claim 8 that consists essentially of silicon dioxide without any additional metal oxide phases.

### Claim 10 (depends on 1)

The high energy density dielectric layer as in claim 1 that has a thickness greater than 1 nm.

### Claim 11 (depends on 1)

The high energy density dielectric layer as in claim 1 that is formed on a conductive element.

### Claim 12

A method of forming a high energy density dielectric layer by incorporating into a theoretically dense perovskite electroceramic a polycrystalline network of uniformly distributed grains having uniform grain size equal to or less than or equal to 50 mm and an intra-granular crystalline lattice that has an average atomic mass (amu) greater than or equal to 25 mm.

### Claim 13 (depends on 12)

The method of claim 12 further comprising incorporation of higher amu elements into the said theoretically dense perovskite electroceramics.

### Claim 14 (depends on 13)

The method of claim 13 wherein said incorporated amu elements comprise three or more metal oxide components related from table above.