# US 2021/0172079 A1 · Hydrocarbon-selective electrode

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- Number: US 2021/0172079 A1
- Document ID: US20210172079A1
- Status: Published application
- Kind: A1
- Application number: 16/763,144
- Filed: 2018-11-16
- Published: 2021-06-10
- Earliest claimed: 2017-11-16
- Assignees: Siemens Aktiengesellschaft
- Applicants: Siemens Aktiengesellschaft
- Inventors: Nemanja Martic; Christian Reller; Günter Schmid; Bernhard Schmid; David Reinisch
- Web page: https://patentgrep.com/patent/US20210172079A1

## CPC

- C25B 11/077: the compound being a non-noble metal oxide
- C23C 24/02: by application of pressure only
- C25B 3/03: Acyclic or carbocyclic hydrocarbons
- C25B 3/25: Reduction
- C25B 3/26: of carbon dioxide
- C25B 9/23: comprising ion-exchange membranes in or on which electrode material is embedded
- C25B 11/031: Porous electrodes
- C25B 11/032: Gas diffusion electrodes
- C25B 11/042: Electrodes formed of a single material
- C25B 11/054: Electrodes comprising electrocatalysts supported on a carrier
- C25B 11/065: Carbon
- C25B 11/093: at least one noble metal or noble metal oxide and at least one non-noble metal oxide
- C25B 13/00: Diaphragms; Spacing elements
- C25B: ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR (anodic or cathodic protection C23F13/00; single-crystal growth C30B)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

An electrode, which includes at least one tetragonally crystallized compound containing at least one element selected from the group of Cu and Ag, the crystal lattice of the compound being of the space group I41/amd type. An electrolysis cell includes the electrode.

## Claims

### Claim 1

An electrode comprising;
at least one tetragonally crystallized compound containing at least one element selected from Cu and Ag,
wherein the crystal lattice of the compound belongs to the I41/amd space group.

### Claim 2 (depends on 1)

The electrode as claimed in claim 1,
wherein the compound is selected from Cu4O3 and a compound isomorphous with Cu4O3.

### Claim 3 (depends on 2)

The electrode as claimed in claim 2,
wherein, in the crystal lattice of the compound isomorphous with Cu4O3 (Cu+2Cu2+2O3), at least one of lattice sites corresponding to the Cu+ and the Cu2+ contains Cu or Ag or proportions of Cu or Ag; and/or
wherein the compound isomorphous with Cu4O3 is selected from Ag0.58CeSi1.42, Ag2Cu2O3, Ag0.28Si1.72Yb, Cu1.035TeI, CuCr2O4, C4H4CuN6, Ag0.7CeSi1.3, Ag8O4S2Si, Ag3CuS2, CuTeCl, Ba2Cs2Cu3F12, CuO4Rh2, CuFe2O4, Ag0.3CeSi1.7, Ag6O8SSi, BaCuInF7, Cu0.99TeBr, BaCu2O2, Cu16O14.15, YBa2Cu3O6 and C8Ag9Cl6Cs5N8.

### Claim 4 (depends on 1)

The electrode as claimed in claim 1,
wherein the compound is present in an amount of 0.1-100% by weight, based on the electrode or on a region of the electrode; and/or
wherein the compound has been applied to a support.

### Claim 5 (depends on 1)

The electrode as claimed in claim 1,
wherein the electrode is a gas diffusion electrode.

### Claim 6 (depends on 1)

An electrolysis cell comprising:
an electrode as claimed in claim 1.

### Claim 7 (depends on 1)

A process for producing an electrode as claimed in claim 1, comprising;
providing at least one tetragonally crystallized compound containing at least one element selected from Cu and Ag, wherein the crystal lattice of the compound belongs to the I41/amd space group; and
further comprising a step selected from:
applying the compound to a support; and
forming the compound to an electrode.

### Claim 8 (depends on 7)

The process as claimed in claim 7,
wherein the compound is selected from Cu4O3 and a compound isomorphous with Cu4O3.

### Claim 9 (depends on 8)

The process as claimed in claim 8,
wherein, in the crystal lattice of the compound isomorphous with Cu4O3 (Cu+2Cu2+2O3), at least one of lattice sites corresponding to the Cu+ and the Cu2+ contains Cu or Ag or proportions of Cu or Ag; and/or
wherein the compound isomorphous with Cu4O3 is selected from Ag0.58CeSi1.42, Ag2Cu2O3, Ag0.28Si1.72Yb, Cu1.035TeI, CuCr2O4, C4H4CuN6, Ag0.7CeSi1.3, Ag8O4S2Si, Ag3CuS2, CuTeCl, Ba2Cs2Cu3F12, CuO4Rh2, CuFe2O4, Ag0.3CeSi1.7, Ag6O8SSi, BaCuInF7, Cu0.99TeBr, BaCu2O2, Cu16O14.15, YBa2Cu3O6 and C8Ag9Cl6Cs5N8.

### Claim 10 (depends on 7)

The process as claimed in claim 7,
wherein the step of applying the compound to the support is selected from
applying a mixture or powder comprising the compound to the support and dry rolling the mixture or powder onto the support;
applying a dispersion comprising the compound to the support; and
contacting the support with a gas phase comprising the compound, and applying the compound to the support from the gas phase.

### Claim 11 (depends on 10)

The process as claimed in claim 10,
wherein the compound is applied with a mass coverage of at least 0.5 mg/cm2; and/or
wherein the rolling application is effected at a temperature of 25-100° C.

### Claim 12 (depends on 7)

The process as claimed in claim 7,
wherein the support is a gas diffusion electrode, a support of a gas diffusion electrode, or a gas diffusion layer.

### Claim 13 (depends on 7)

The process as claimed in claim 7,
wherein the step of forming the compound to an electrode comprises rolling of a powder comprising the compound to give the electrode.

### Claim 14 (depends on 7)

The process as claimed in claim 7,
wherein the electrode is produced in such a way that the compound is present in an amount of 0.1-100% by weight, based on the electrode or on a region of the electrode; and/or
wherein the compound is provided and applied or formed in a mixture comprising at least one binder.

### Claim 15 (depends on 14)

The process as claimed in claim 14,
wherein the at least one binder is present in the mixture in an amount of >0% to 30% by weight, based on the total weight of the compound and the at least one binder.

### Claim 16 (depends on 1)

A process for electrochemical conversion of CO2 and/or CO,
wherein CO2 and/or CO is introduced at the cathode into an electrolysis cell comprising an electrode as claimed in claim 1 as cathode and reduced.

### Claim 17

A process for reduction or electrolysis of CO2 and/or CO, comprising:
using at least one tetragonally crystallized compound containing at least one element selected from Cu and Ag, wherein the crystal lattice of the compound belongs to the I41/amd space group, for reduction or in the electrolysis of CO2 and/or CO.

### Claim 18 (depends on 1)

A process for reduction or electrolysis of CO2 and/or CO, comprising:
using the electrode of claim 1.

### Claim 19 (depends on 4)

The electrode as claimed in claim 4,
wherein the compound is present in an amount of 40-100% by weight based on the electrode or on a region of the electrode

### Claim 20 (depends on 4)

The electrode as claimed in claim 4,
wherein the compound is present in an amount of 70-100% by weight, based on the electrode or on a region of the electrode.
