# US 2021/0171801 A1 · Polishing composition

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- Number: US 2021/0171801 A1
- Document ID: US20210171801A1
- Status: Published application
- Kind: A1
- Application number: 17/253,616
- Filed: 2019-08-01
- Published: 2021-06-10
- Earliest claimed: 2018-08-03
- Assignees: Nitta Dupont Incorporated
- Applicants: NITTA DuPont Incorporated
- Inventors: Shuhei MATSUDA
- Web page: https://patentgrep.com/patent/US20210171801A1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P 90/129: {by polishing}
- B24B 37/00: Lapping machines or devices; Accessories (B24B3/00 takes precedence)
- C09G 1/16: on natural or synthetic resins
- C09G 1/18: on other substances
- C09K 3/1436: {Composite particles, e.g. coated particles}
- C07F 7/10: containing nitrogen {having a Si-N linkage}
- C07F 7/1804: {Compounds having Si-O-C linkages (Si-O-acyl linkages C07F7/1896)}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)

## Abstract

A polishing composition is provided that is capable of quickly removing oxide film even with lower abrasive concentration. A polishing composition includes: silica with a silanol group density of 2.0 OH/nm2 or higher; and an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group, the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof. However, the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

## Claims

### Claim 1

A polishing composition, comprising:
silica with a silanol group density of 2.0 OH/nm2 or higher; and
an organic silicon compound having, at a terminal, an amino group, methylamino group, dimethylamino group or quaternary ammonium group,
the organic silicon compound having two or more alkoxyl groups or hydroxyl groups bonded to an Si atom thereof,
wherein the quaternary ammonium group of the organic silicon compound does not have an alkyl group with a carbon number of two or more.

### Claim 2 (depends on 1)

The polishing composition according to claim 1, wherein the organic silicon compound includes three or more alkoxyl groups or hydroxyl groups bonded to the Si atom.

### Claim 3 (depends on 1)

The polishing composition according to claim 1, wherein the organic silicon compound is expressed by the following general formula, (1):
X1—(R1—NH)n—X2—Si(OR2)m(R3)3-m (1),
where X1 indicates an amino group, methylamino group, dimethylamino group, or quaternary ammonium group; X2 indicates a single bond or a divalent hydrocarbon group with a carbon number of 1 to 8; R1 indicates a divalent hydrocarbon group with a carbon number of 1 to 8; R2 indicates a hydrogen atom or a monovalent hydrocarbon group with a carbon number of 1 to 6; R3 indicates a monovalent hydrocarbon group with a carbon number of 1 to 10; n indicates an integer of 0 to 2; and m indicates 2 or 3, where the quaternary ammonium group of X1 does not have an alkyl group with a carbon number of 2 or more.

### Claim 4 (depends on 1)

The polishing composition according to claim 1, wherein the organic silicon compound is expressed by the following general formula, (2):
X3—(R4—NH)k—X5—Si(OR6)h(R8)2-h—O—Si(OR7)i(R9)2-i—X6—(NH—R5)j—X4 (2),
where each of X3 and X4 independently indicates an amino group, methylamino group, dimethylamino group, or quaternary ammonium group; each of X5 and X6 independently indicates a single bond or a divalent hydrocarbon group with a carbon number of 1 to 8; each of R4 and R5 independently indicates a divalent hydrocarbon group with a carbon number of 1 to 8; each of R6 and R7 independently indicates a hydrogen atom or a monovalent hydrocarbon group with a carbon number of 1 to 6; each of R8 and R9 independently indicates a monvalent hydrocarbon group with a carbon number of 1 to 10; each of k and j independently indicates an integer of 0 to 2; and each of h and i independently indicates 1 or 2, wherein the quaternary ammonium group of X3 and X4 does not have an alkyl group with a carbon number of 2 or more.

### Claim 5 (depends on 1)

The polishing composition according to claim 1, wherein the concentration of the organic silicon compound is 2 or more parts by weight, where the amount of silica is represented as 100 parts by weight.

### Claim 6 (depends on 1)

The polishing composition according to claim 1, wherein the molecular weight of the organic silicon compound, M, the concentration of the organic silicon compound, cc, the primary particle size of the silica, d1, the true density of the silica, ρ0, and the concentration of the silica, cs, satisfy the following expression:
(78260/M×cc)/{6/(d1×ρ0)×1000×cs}×100≥8.0,
where the unit for d1 is nm, the unit for ρ0 is g/cm3, and the unit for cc and cs is weight %.

### Claim 7 (depends on 1)

The polishing composition according to claim 1, further comprising a basic compound other than the organic silicon compound.

### Claim 8 (depends on 7)

The polishing composition according to claim 7, wherein the basic compound is an inorganic compound.

### Claim 9 (depends on 7)

The polishing composition according to claim 7, wherein the basic compound is an amine compound.

### Claim 10 (depends on 1)

The polishing composition according to claim 1, further comprising a water-soluble polymer.