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US 2021/0118679 A1Published application
Methods for selective deposition of doped semiconductor material
AssigneeASM IP Holding B.V.
InventorsLucas Petersen Barbosa Lima, Rami Khazaka, Qi Xie
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Abstract
Methods and systems for selectively depositing material, such as doped semiconductor material, are disclosed. An exemplary method includes providing a substrate, comprising a first area comprising a first material and a second area comprising a second material, selectively depositing a first doped semiconductor layer overlying the first material relative to the second material and selectively depositing a second doped semiconductor layer overlying the first doped semiconductor layer relative to the second material.
Claims20
A selective deposition method comprising the steps of:
- providing a substrate, comprising a surface comprising a first area comprising a first material and a second area comprising a second material, within a reaction chamber;
- selectively and epitaxially depositing a first doped semiconductor layer overlying the first material;
- and
- selectively and epitaxially depositing a second doped semiconductor layer overlying the first doped semiconductor layer;
- wherein the first material comprises a doped or undoped monocrystalline material selected from the list consisting of silicon (Si), silicon germanium (SiGe), germanium tin (GeSn), silicon germanium tin (SiGeSn), and germanium (Ge);
- wherein the second material comprises a non-monocrystalline dielectric material selected from silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon oxycarbide, and mixtures thereof.
3 more elements
A system comprising:
- one or more reaction chambers;
- a gas injection system fluidly coupled to at least one of the one or more reaction chambers;
- a first gas source;
- a second gas source;
- a third gas source;
- an exhaust source;
- and
- a controller,
- wherein the controller is configured to control gas flow into the gas injection system to selectively form a first doped semiconductor layer overlying a first surface of a substrate relative to a second surface of the substrate and selectively form a second doped semiconductor layer overlying the first doped semiconductor layer.
6 more elements
Dependencies are inferred from the claim text.