# US 2021/0083045 A1 · Electronic power device with super-junction > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0083045 A1 - Document ID: US20210083045A1 - Status: Published application - Kind: A1 - Application number: 17/018,411 - Filed: 2020-09-11 - Published: 2021-03-18 - Earliest claimed: 2019-09-12 - Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives - Applicants: Commissariat à l'Energie Atomique et aux Energies Alternatives - Inventors: Julien BUCKLEY; Jérôme BISCARRAT - Web page: https://patentgrep.com/patent/US20210083045A1 ## CPC - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 62/111: {Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures} - H10D 8/043: {of planar diodes} - H10D 8/051: {of Schottky diodes} - H10D 8/60: Schottky-barrier diodes - H10D 62/824: comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions - H10D 64/111: {Field plates} - H10D 64/112: {comprising multiple field plate segments} - H10D 84/146: {the built-in components being Schottky barrier diodes} - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract An integrated electronic device includes a first terminal and a second terminal, a Schottky diode having a first threshold voltage and coupled between the first terminal and the second terminal, a derivation component having a second threshold voltage greater than the first threshold voltage and coupled between the first terminal and the second terminal. The derivation component comprises a super-junction. ## Claims ### Claim 1 An integrated electronic device comprising: a Schottky diode comprising an anode and a cathode mutually coupled by a two-dimensional electron gas and having a first threshold voltage, a derivation component having a second threshold voltage greater than the first threshold voltage and coupled in parallel with the Schottky diode, wherein the derivation component is a lateral super-junction transistor comprising an insulated vertical gate, a source electrically connected to the anode of the Schottky diode and a drain electrically connected to the cathode of the Schottky diode, the insulated vertical gate and the source being mutually electrically coupled so as to be at the same electrical potential. ### Claim 2 (depends on 1) The device according to claim 1, comprising an electrically conductive layer, the insulated vertical gate comprising a first vertical portion of the electrically conductive layer, said first portion being electrically insulated from the super-junction by a dielectric layer, the source of the transistor comprising a second portion of said electrically conductive layer. ### Claim 3 (depends on 2) The device according to claim 2, wherein the anode of the Schottky diode comprises the second portion of the electrically conductive layer. ### Claim 4 (depends on 2) The device according to claim 2, wherein the device comprises a heterojunction arranged on the super-junction and comprising a first junction layer and a second junction layer, the two-dimensional electron gas being formed at the interface between the first junction layer and the second junction layer. ### Claim 5 (depends on 4) The device according to claim 4, wherein the second portion of the electrically conductive layer forms a Schottky contact with the two-dimensional electron gas, at a distance from the ends of the first junction layer. ### Claim 6 (depends on 2) The device according to claim 2, comprising at least one field plate comprising a horizontal portion of the electrically conductive layer. ### Claim 7 (depends on 1) The device according to claim 1, wherein the drain of the transistor comprising a heavily doped semiconductor region of a first conductivity type, the super-junction comprising a vertical stack of an alternation of semiconductor layers of the first conductivity type and of semiconductor layers of a second conductivity type opposite to the first conductivity type, the first and second layers extending horizontally from the heavily doped semiconductor region up to the insulated vertical gate. ### Claim 8 (depends on 7) The device according to claim 7, wherein the super-junction comprises an alternation of five first layers N type doped at a concentration of 4×1018 cm−3 and of five second layers P type doped at a concentration of 4×1018 cm−3, the first and second layers each having a thickness equal to 150 nm. ### Claim 9 (depends on 8) The device according to claim 8, wherein the super-junction is arranged on a voltage withstand layer of thickness equal to 3 μm and N type doped at a concentration of 1×1016 cm−3. ### Claim 10 (depends on 7) The device according to claim 7, wherein the cathode of the Schottky diode comprises an electrically conductive layer in ohmic contact with the heavily doped semiconductor region and the two-dimensional electron gas. ### Claim 11 A method for manufacturing an integrated electronic device comprising: forming a Schottky diode comprising an anode and a cathode mutually coupled by a two-dimensional electron gas, the Schottky diode having a first threshold voltage; forming a derivation component having a second threshold voltage greater than the first threshold voltage, the derivation component being a lateral super-junction transistor comprising an insulated vertical gate, a source and a drain, the insulated vertical gate and the source being mutually electrically coupled so as to be at the same electrical potential, and carrying out a parallel coupling of the derivation component and the Schottky diode, the source of the transistor being electrically connected to the anode of the Schottky diode and the drain of the transistor being electrically connected to the cathode of the Schottky diode. ### Claim 12 (depends on 11) The method according to claim 11, further comprising: producing the super-junction comprising a stack of an alternation of first semiconductor layers of a first conductivity type and of second semiconductor layers of a second conductivity type opposite to the first conductivity type, producing a heavily doped semiconductor region of the first conductivity type at a first end of the semiconductor layers, producing, on the super-junction, a heterojunction comprising a production of a first junction layer of a first semiconductor material and a production of a second junction layer of a second semiconductor material on the first junction layer, the first and the second materials having different bandgaps so that the two-dimensional electron gas is formed at the interface between the first junction layer and the second junction layer, producing an insulated vertical gate at a second end of the semiconductor layers, producing the anode of the Schottky diode by a formation of a first Schottky contact with the two-dimensional electron gas so that the first Schottky contact and the insulated vertical gate are mutually electrically coupled, and producing a second ohmic contact with the two-dimensional electron gas and the heavily doped semiconductor region. ### Claim 13 (depends on 12) The method according to claim 12, comprising a deposition of an electrically conductive layer, so that the insulated vertical gate comprises a first portion of the electrically conductive layer and that the first Schottky contact comprises a second portion of the electrically conductive layer. ### Claim 14 (depends on 13) The method according to claim 13, comprising the production of at least one field plate comprising a third horizontal portion of the electrically conductive layer.