# US 2021/0082989 A1 · Photoelectric conversion element, imaging device, and electronic apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082989 A1 - Document ID: US20210082989A1 - Status: Published application - Kind: A1 - Application number: 17/102,123 - Filed: 2020-11-23 - Published: 2021-03-18 - Earliest claimed: 2015-08-27 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: YOSUKE SAITO; YOSHIAKI OBANA; NOBUYUKI MATSUZAWA - Web page: https://patentgrep.com/patent/US20210082989A1 ## CPC - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 39/191: {Photoconductor image sensors} - H10K 19/20: comprising components having an active region that includes an inorganic semiconductor - H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes - H10K 39/32: Organic image sensors - H10K 85/115: {Polyfluorene; Derivatives thereof} - H10K 85/215: {comprising substituents, e.g. PCBM} - H10K 85/633: {comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom} - H10K 85/655: {comprising only sulfur as heteroatom} - H10K 85/6572: {comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole} - H10F 39/8033: {Photosensitive area} - H10K 85/111: {comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene} - H10K 85/113: {Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene} - H10K 85/322: {comprising boron} - H10K 85/626: {containing more than one polycyclic condensed aromatic rings, e.g. bis-anthracene} - Y02E 10/549: Organic PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A photoelectric conversion element includes a first electrode and a second electrode that are oppositely disposed and a photoelectric conversion layer that is provided between the first electrode and the second electrode, and includes a high-molecular semiconductor material and a low-molecular material. The high-molecular semiconductor material has an absorption coefficient in a visible light region of 50000 cm−1 or less. The low-molecular material includes an absorption peak in a wavelength range corresponding to one color in the visible light region. ## Claims ### Claim 1 A photoelectric conversion element, comprising: a first electrode; a second electrode; a photoelectric conversion layer between the first electrode and the second electrode, wherein the photoelectric conversion layer comprises: a first semiconductor material that has a molecular weight of 3000 or more and has an absorption coefficient in a visible light region of 50000 cm−1 or less; and a second semiconductor material that has a molecular weight of less than 3000 and comprises an absorption peak in a first wavelength range corresponding to one color in the visible light region. ### Claim 2 (depends on 1) The photoelectric conversion element according to claim 1, wherein the first semiconductor material is a p-type semiconductor and the second semiconductor material is an n-type semiconductor. ### Claim 3 (depends on 1) The photoelectric conversion element according to claim 1, wherein the first semiconductor material is an n-type semiconductor and the second semiconductor material is a p-type semiconductor. ### Claim 4 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material has an absorption coefficient of 50000 cm−1 or more in one of a second wavelength range of 450 nm or more and less than 500 nm, a third wavelength range of 500 nm or more and less than 600 nm, or a fourth wavelength range of 600 nm or more and less than 750 nm. ### Claim 5 (depends on 1) The photoelectric conversion element according to claim 1, wherein the visible light region corresponds to a second wavelength range of 450 nm or more and 750 nm or less. ### Claim 6 (depends on 5) The photoelectric conversion element according to claim 5, wherein the first semiconductor material has the absorption coefficient of 50000 cm−1 or less in the visible light region. ### Claim 7 (depends on 1) The photoelectric conversion element according to claim 1, wherein the photoelectric conversion layer has a thickness of 50 nm to 500 nm. ### Claim 8 (depends on 1) The photoelectric conversion element according to claim 1, wherein the first semiconductor material is represented by one of general formula (1) or (2) ### Claim 9 (depends on 8) The photoelectric conversion element according to claim 8, wherein the first semiconductor material is represented by general formula (1-1) ### Claim 10 (depends on 8) The photoelectric conversion element according to claim 8, wherein the first semiconductor material is represented by one of general formula (2-1) or (2-2) ### Claim 11 (depends on 1) The photoelectric conversion element according to claim 1, wherein the first semiconductor material is represented by one of general formula (3-1), (3-2), or (3-3) ### Claim 12 (depends on 1) The photoelectric conversion element according to claim 1, wherein the first semiconductor material is represented by general formula (4) ### Claim 13 (depends on 12) The photoelectric conversion element according to claim 12, wherein the first semiconductor material is represented by general formula (4-1) ### Claim 14 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material comprises the absorption peak in one of a second wavelength range of 450 nm or more and less than 500 nm, a third wavelength range of 500 nm or more and less than 600 nm, or a fourth wavelength range of 600 nm or more and less than 750 nm, and the second semiconductor material comprises an absorption coefficient equal to 50000 cm−1 or more at the absorption peak. ### Claim 15 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material is represented by one of general formula (5) or (6) ### Claim 16 (depends on 15) The photoelectric conversion element according to claim 15, wherein the second semiconductor material is represented by one of general formula (5-1) or (5-2) ### Claim 17 (depends on 15) The photoelectric conversion element according to claim 15, wherein the second semiconductor material is represented by one of general formula (6-1) or (6-2) ### Claim 18 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material is represented by one of general formula (7-1), (7-2), or (7-3) ### Claim 19 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material is represented by one of general formula (8-1) or (8-2) ### Claim 20 (depends on 1) The photoelectric conversion element according to claim 1, wherein the second semiconductor material is represented by one of general formula (9-1) or (9-2)