# US 2021/0082984 A1 · Solid-state imaging device, method of manufacturing the same, and electronic device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082984 A1 - Document ID: US20210082984A1 - Status: Published application - Kind: A1 - Application number: 17/108,579 - Filed: 2020-12-01 - Published: 2021-03-18 - Earliest claimed: 2014-11-18 - Assignees: Sony Corporation - Applicants: Sony Corporation - Inventors: Tadayuki DOFUKU - Web page: https://patentgrep.com/patent/US20210082984A1 ## CPC - H10F 39/8057: {Optical shielding} - H10F 39/014: {of CMOS image sensors} - H10F 39/12: Image sensors - H10F 39/199: {Back-illuminated image sensors} - H10F 39/807: {Pixel isolation structures} - H10W 10/00: Isolation regions in semiconductor bodies between components of integrated devices - H10W 10/01: {Manufacture or treatment} - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present technology relates to a solid-state imaging device capable of inhibiting peeling of a fixed charge film while inhibiting dark current, a method of manufacturing the same, and an electronic device. A solid-state imaging device provided with a semiconductor substrate in which a plurality of photodiodes is formed, a groove portion formed in a depth direction from a light incident side for forming an element separating unit between adjacent photoelectric conversion elements on the semiconductor substrate, a first fixed charge film formed so as to cover a surface of a planar portion on the light incident side of the semiconductor substrate, and a second fixed charge film formed so as to cover an inner wall surface of the groove portion formed on the semiconductor substrate is provided. The present technology is applicable to a backside illumination CMOS image sensor, for example. ## Claims ### Claim at position 1 1-11. (canceled) ### Claim 12 A light detecting device comprising: a first photoelectric conversion region and a second photoelectric conversion region disposed in a semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region; a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, wherein the groove portion is disposed between the first photoelectric conversion region and the second photoelectric conversion region; a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide; and a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide. ### Claim 13 (depends on 12) The light detecting device of claim 12, wherein an opening of the groove portion is blocked by the first film in the cross-sectional view. ### Claim 14 (depends on 13) The light detecting device of claim 13, wherein the opening of the groove portion is disposed below the light receiving plane. ### Claim 15 (depends on 13) The light detecting device of claim 13, wherein the opening of the groove portion is higher than the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view. ### Claim 16 (depends on 12) The light detecting device of claim 12, wherein the first film is a first fixed charge film. ### Claim 17 (depends on 16) The light detecting device of claim 16, wherein a large portion of the light receiving plane is covered by the first fixed charge film. ### Claim 18 (depends on 12) The light detecting device of claim 12, wherein the second film is a second fixed charge film. ### Claim 19 (depends on 18) The light detecting device of claim 18, wherein a large portion of the inner wall surface is covered by the second fixed charge film. ### Claim 20 (depends on 12) The light detecting device of claim 12, wherein a light shielding portion is disposed above the groove portion. ### Claim 21 (depends on 20) The light detecting device of claim 20, wherein the light shielding portion includes one of W or Al. ### Claim 22 (depends on 12) The light detecting device of claim 12, wherein the light receiving plane is opposite to a side of a wiring layer. ### Claim 23 (depends on 12) The light detecting device of claim 12, wherein the light detecting device comprises a backside illumination Complementary Metal Oxide Semiconductor (CMOS) image sensor. ### Claim 24 A light detecting device comprising: a first photoelectric conversion region and a second photoelectric conversion region disposed in a semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region; a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, and wherein the groove portion is disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view; a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide, wherein the first film comprises a first portion, a second portion, and a third portion, and wherein the second portion is disposed between the first portion and the third portion; and a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide. ### Claim 25 (depends on 24) The light detecting device of claim 24, wherein the first portion and the third portion of the first film are disposed above the first photoelectric conversion region and the second photoelectric conversion regions, respectively in the cross-sectional view. ### Claim 26 (depends on 24) The light detecting device of claim 24, wherein the second portion of the first film is disposed above the groove portion in the cross-sectional view. ### Claim 27 (depends on 24) The light detecting device of claim 24, wherein the second portion of the first film is in direct contact with the second film. ### Claim 28 (depends on 24) The light detecting device of claim 24, wherein the first portion, the second portion, and the third portion of the first film are linked together. ### Claim 29 An electronic device comprising: a light detecting device including: a semiconductor substrate; a first photoelectric conversion region and a second photoelectric conversion region disposed in the semiconductor substrate, wherein the first photoelectric conversion region is adjacent to the second photoelectric conversion region; a groove portion disposed in the semiconductor substrate below a light receiving plane of the semiconductor substrate in a cross-sectional view, and disposed between the first photoelectric conversion region and the second photoelectric conversion region in the cross-sectional view; a first film disposed above the light receiving plane, wherein the first film includes a hafnium oxide; and a second film covering an inner wall surface of the groove portion, wherein the second film includes one of an aluminum oxide, zirconium oxide, tantalum oxide, or titanium oxide.