# US 2021/0082982 A1 · Solid-state imaging device and electronic apparatus

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- Number: US 2021/0082982 A1
- Document ID: US20210082982A1
- Status: Published application
- Kind: A1
- Application number: 16/959,709
- Filed: 2018-12-28
- Published: 2021-03-18
- Earliest claimed: 2018-01-11
- Assignees: Sony Semiconductor Solutions Corporation
- Applicants: Sony Semiconductor Solutions Corporation
- Inventors: ITARU OSHIYAMA
- Web page: https://patentgrep.com/patent/US20210082982A1

## CPC

- H10F 39/8053: {Colour filters}
- H10F 39/807: {Pixel isolation structures}
- H04N 25/70: SSIS architectures; Circuits associated therewith
- H10F 30/20: the devices having potential barriers, e.g. phototransistors
- H10F 39/805: {Coatings}
- H10F 39/811: {Interconnections}
- H10F 39/18: Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/8057: {Optical shielding}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION

## Abstract

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

## Claims

### Claim 1

A solid-state imaging device comprising:
a substrate;
a first photoelectric conversion region that is provided in the substrate;
a second photoelectric conversion region that is provided in the substrate;
a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate;
a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and
a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region.

### Claim 2 (depends on 1)

The solid-state imaging device according to claim 1, wherein
an insulating film is formed in the trench.

### Claim 3 (depends on 1)

The solid-state imaging device according to claim 1, wherein
the trench is filled with a metal material.

### Claim 4 (depends on 2)

The solid-state imaging device according to claim 2, wherein
a pinning layer is stacked between the substrate and the insulating film.

### Claim 5 (depends on 2)

The solid-state imaging device according to claim 2, wherein
an antireflection film is stacked between the substrate and the insulating film.

### Claim 6 (depends on 1)

The solid-state imaging device according to claim 1, wherein
the concave portion region is formed at a central portion of a pixel, the central portion of the pixel being a region of a predetermined ratio to a pixel region.

### Claim 7 (depends on 1)

The solid-state imaging device according to claim 1, wherein
the concave portion region is formed at a central portion of a pixel, the central portion of the pixel being a region of 80% of a pixel region.

### Claim 8 (depends on 1)

The solid-state imaging device according to claim 1, wherein
a flat portion of a predetermined width in which the concave portion region is not formed is provided between pixels on the light receiving surface side.

### Claim 9

An electronic apparatus comprising:
a solid-state imaging device including:
a substrate;
a first photoelectric conversion region that is provided in the substrate;
a second photoelectric conversion region that is provided in the substrate;
a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate;
a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and
a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region.