# US 2021/0082974 A1 · Imaging element > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082974 A1 - Document ID: US20210082974A1 - Status: Published application - Kind: A1 - Application number: 16/956,163 - Filed: 2019-02-01 - Published: 2021-03-18 - Earliest claimed: 2018-02-16 - Assignees: Sony Semiconductor Solutions Corporation - Applicants: Sony Semiconductor Solutions Corporation - Inventors: Tetsuya UCHIDA; Tomoyuki HIRANO; Ryoji SUZUKI - Web page: https://patentgrep.com/patent/US20210082974A1 ## CPC - H10F 39/807: {Pixel isolation structures} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes} - H10F 39/80373: {characterised by the gate of the transistor} - H10F 39/8053: {Colour filters} - H10F 39/8057: {Optical shielding} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations} - H10W 10/031: {of isolation regions comprising PN junctions} - H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations - H10W 10/30: Isolation regions comprising PN junctions - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present technology relates to an imaging element that can increase the degree of freedom of element arrangement. A photoelectric conversion unit, a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit, and a PN junction region in a side wall of the trench are included, and the through trench has an opening portion, and a P-type region is formed in the opening portion. A photoelectric conversion unit, a holding unit, a through trench formed between the photoelectric conversion unit and the holding unit, and a PN junction region in a side wall of the through trench are included, and the through trench has an opening portion and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. The present technology can be applied to, for example, an imaging element. ## Claims ### Claim 1 An imaging element comprising: a photoelectric conversion unit configured to perform photoelectric conversion; a through trench penetrating a semiconductor substrate in a depth direction and formed between pixels each including the photoelectric conversion unit; and a PN junction region configured by a P-type region and an N-type region in a side wall of the through trench, wherein the through trench partially has an opening portion, and the P-type region is formed in the opening portion. ### Claim 2 (depends on 1) The imaging element according to claim 1, wherein the opening portion is formed at least one corner of four corners of the pixel. ### Claim 3 (depends on 1) The imaging element according to claim 1, wherein a contact region for fixing a potential is formed in at least one pixel of a plurality of pixels that is electrically conductive by the opening portion. ### Claim 4 (depends on 3) The imaging element according to claim 3, wherein the electrically conductive pixels are pixels having a green color filter. ### Claim 5 (depends on 1) The imaging element according to claim 1, wherein a light shielding film for covering the opening portion is formed on a light incident surface side of the opening portion. ### Claim 6 (depends on 1) The imaging element according to claim 1, wherein a non-through trench is formed in the opening portion. ### Claim 7 (depends on 1) The imaging element according to claim 1, wherein the P-type region of the opening portion is formed in a region sandwiched by non-through trenches. ### Claim 8 (depends on 1) The imaging element according to claim 1, wherein the through trench is formed in an element isolation region. ### Claim 9 (depends on 1) The imaging element according to claim 1, wherein the P-type region and an active region are formed in the opening portion. ### Claim 10 (depends on 9) The imaging element according to claim 9, wherein a contact region for fixing a potential is formed in the opening portion. ### Claim 11 (depends on 1) The imaging element according to claim 1, wherein the opening portion is formed in a side of the pixel. ### Claim 12 (depends on 11) The imaging element according to claim 11, wherein the through trench formed in the opening portion is formed in a T shape. ### Claim 13 (depends on 11) The imaging element according to claim 11, wherein the P-type region formed in the opening portion is formed larger than the P-type region formed in a portion other than the opening portion. ### Claim 14 (depends on 11) The imaging element according to claim 11, wherein a floating diffusion (FD) region is formed in the opening portion. ### Claim 15 An imaging element comprising: a photoelectric conversion unit configured to perform photoelectric conversion; a holding unit configured to hold a charge transferred from the photoelectric conversion unit; a through trench penetrating a semiconductor substrate in a depth direction and formed between the photoelectric conversion unit and the holding unit; and a PN junction region configured by a P-type region and an N-type region in a side wall of the through trench, wherein the through trench partially has an opening portion, and a readout gate for reading the charge from the photoelectric conversion unit is formed in the opening portion. ### Claim 16 (depends on 15) The imaging element according to claim 15, wherein the readout gate is formed in a vertical direction and a horizontal direction with respect to the photoelectric conversion unit. ### Claim 17 (depends on 15) The imaging element according to claim 15, wherein the P-type region is formed in the opening portion. ### Claim 18 (depends on 15) The imaging element according to claim 15, wherein a through trench is also formed in the opening portion. ### Claim 19 (depends on 15) The imaging element according to claim 15, wherein the P-type region formed in the opening portion is formed larger than the P-type region formed in a portion other than the opening portion. ### Claim 20 (depends on 15) The imaging element according to claim 15, wherein a contact region for fixing a potential is formed in at least one pixel of a plurality of pixels that is electrically conductive by the opening portion.