# US 2021/0082968 A1 · Display device

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- Number: US 2021/0082968 A1
- Document ID: US20210082968A1
- Status: Published application
- Kind: A1
- Application number: 17/090,223
- Filed: 2020-11-05
- Published: 2021-03-18
- Earliest claimed: 2016-12-02
- Assignees: Innolux Corporation
- Applicants: InnoLux Corporation
- Inventors: CHANDRA LIUS; Nai-Fang HSU
- Web page: https://patentgrep.com/patent/US20210082968A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/133345: {Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence)}
- G02F 1/13338: {Input devices, e.g. touch panels}
- G02F 1/134309: {characterised by their geometrical arrangement}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- G06F 3/0412: {Digitisers structurally integrated in a display}
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6734: {having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs}
- H10D 30/674: {characterised by the active materials}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 62/80: characterised by the materials
- H10D 64/512: {Disposition of the gate electrodes, e.g. buried gates}
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- H10K 59/40: OLEDs integrated with touch screens
- G02F 1/133388: {with constructional differences between the display region and the peripheral region}
- G02F 1/13685: {Top gates}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display device is disclosed, which includes: a first substrate; an oxide semiconductor layer disposed on the first substrate; a silicon semiconductor layer disposed on the first substrate; and a capacitor including a first conductive component and a second conductive component, wherein the first conductive component is electrically connected to the oxide semiconductor layer and the second conductive component is electrically connected to the silicon semiconductor layer.

## Claims

### Claim 1

A display device, comprising:
a first substrate;
an oxide semiconductor layer disposed on the first substrate;
a silicon semiconductor layer disposed on the first substrate; and
a capacitor including a first conductive component and a second conductive component,
wherein the first conductive component is electrically connected to the oxide semiconductor layer and the second conductive component is electrically connected to the silicon semiconductor layer.

### Claim 2 (depends on 1)

The display device of claim 1, wherein the oxide semiconductor layer is disposed on the silicon semiconductor layer.

### Claim 3 (depends on 1)

The display device of claim 1, further comprising a first gate electrode disposed on the first substrate, wherein the oxide semiconductor layer is disposed on the first gate electrode.

### Claim 4 (depends on 3)

The display device of claim 3, further comprising a gate insulating layer disposed between the first gate electrode and the oxide semiconductor layer, wherein a maximum atomic percentage of oxygen in the gate insulating layer is greater than a maximum atomic percentage of oxygen in the oxide semiconductor layer.

### Claim 5 (depends on 4)

The display device of claim 4, wherein the gate insulating layer comprises silicon oxide.

### Claim 6 (depends on 1)

The display device of claim 1, further comprising a second gate electrode disposed on the first substrate, wherein the second gate electrode is disposed on the silicon semiconductor layer.

### Claim 7 (depends on 1)

The display device of claim 1, further comprising a passivation layer disposed on the oxide semiconductor layer, wherein the passivation layer comprises silicon oxide.

### Claim 8 (depends on 1)

The display device of claim 1, wherein the oxide semiconductor layer is an indium gallium zinc oxide (IGZO) layer.

### Claim 9 (depends on 1)

The display device of claim 1, wherein the silicon semiconductor layer is a low-temperature polycrystalline silicon semiconductor layer.

### Claim 10 (depends on 1)

The display device of claim 1, further comprising a display medium layer electrically connected to the oxide semiconductor layer, wherein the display medium layer is an organic light-emitting diode unit.

### Claim 11 (depends on 1)

The display device of claim 1, wherein the first substrate comprises a flexible substrate.

### Claim 12 (depends on 1)

The display device of claim 1, further comprising a display region and a peripheral region, wherein the peripheral region is adjacent to the display region, and the oxide semiconductor layer and the silicon semiconductor layer are disposed in the display region.

### Claim 13 (depends on 1)

The display device of claim 1, further comprising a display region and a peripheral region, wherein the peripheral region is adjacent to the display region, the oxide semiconductor layer is disposed in the display region, and the silicon semiconductor layer is disposed in the peripheral region.

### Claim 14 (depends on 13)

The display device of claim 13, wherein a driver circuit is disposed in the peripheral region and comprises the silicon semiconductor layer.