# US 2021/0082967 A1 · Metal Wiring and Method of Manufacturing the Same, and Metal Wiring Substrate and Method of Manufacturing the Same

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- Number: US 2021/0082967 A1
- Document ID: US20210082967A1
- Status: Published application
- Kind: A1
- Application number: 17/106,860
- Filed: 2020-11-30
- Published: 2021-03-18
- Earliest claimed: 2001-07-27
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Koji Ono; Hideomi SUZAWA
- Web page: https://patentgrep.com/patent/US20210082967A1

## CPC

- H10D 86/40: characterised by multiple TFTs
- C23F 4/00: Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
- H01B 1/02: mainly consisting of metals or alloys
- H01B 5/14: comprising conductive layers or films on insulating-supports
- H01B 13/0006: {for reducing the size of conductors or cables}
- H01B 13/0036: {Details}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D 64/518: {characterised by their lengths or sectional shapes}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 64/665: {the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum (having lateral variation H10D64/671)}
- H10D 86/00: Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/60: wherein the TFTs are in active matrices
- H10P 50/267: {using plasmas}
- H10W 20/031: {of conductive parts of the interconnections}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

## Claims

### Claim 1

A metal wiring comprising a conductive layer comprising at least one selected from the group consisting of a tungsten film, a metal compound film with a tungsten compound as its main ingredient, and a metal alloy film with a tungsten alloy as its main ingredient,
wherein edges of the conductive film are tapered so as to have a taper angle α of 5 to 85°.