# US 2021/0082944 A1 · Semiconductor device and manufacturing method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082944 A1 - Document ID: US20210082944A1 - Status: Published application - Kind: A1 - Application number: 16/800,163 - Filed: 2020-02-25 - Published: 2021-03-18 - Earliest claimed: 2019-09-13 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Jun IIJIMA; Masayoshi TAGAMI; Masayuki KITAMURA; Satoshi WAKATSUKI - Web page: https://patentgrep.com/patent/US20210082944A1 ## CPC - H10B 43/50: characterised by the boundary region between the core and peripheral circuit regions - H10W 20/076: {in via holes or trenches} - H10W 20/033: {in openings in dielectrics} - H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]} - H10W 20/056: {by filling conductive material into holes, grooves or trenches} - H10W 20/0698: {Local interconnections} - H10W 20/082: {the openings being tapered via holes} - H10W 20/4421: {the principal metal being copper} - H10W 20/4441: {the principal metal being a refractory metal} - H10W 20/47: comprising two or more dielectric layers having different properties, e.g. different dielectric constants - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/40: characterised by the peripheral circuit region - H10W 20/425: {Barrier, adhesion or liner layers} - H10B: ELECTRONIC MEMORY DEVICES - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract A semiconductor device includes a substrate, a logic circuit provided on the substrate, a wiring layer including a plurality of wirings that are provided above the logic circuit, a first insulating film below the wiring layer, a plug, and a second insulating film. Each of the wirings contains copper and extends along a surface plane of the substrate in a first direction. The wirings are arranged along the surface plane of the substrate in a second direction different from the first direction. The plug extends through the first insulating film in a third direction crossing the first and second directions and is electrically connected to one of the wirings. The plug contains tungsten. The second insulating film is provided between the first insulating film and the plug. ## Claims ### Claim 1 A semiconductor device, comprising: a substrate; a logic circuit provided on the substrate; a wiring layer including a plurality of wirings that are provided above the logic circuit, each of the plurality of wirings containing copper and extending along a surface plane of the substrate in a first direction, the plurality of wirings being arranged along the surface plane of the substrate in a second direction different from the first direction; a first insulating film below the wiring layer; a plug extending through the first insulating film in a third direction crossing the first and second directions and electrically connected to one of the plurality of wirings, the plug containing tungsten; and a second insulating film provided between the first insulating film and the plug ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the second insulating film contains aluminum and oxygen. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the second insulating film contains silicon and oxygen. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the second insulating film is in direct contact with the one of the plurality of wirings. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein the second insulating film is in direct contact with the inner wall of the opening. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the second insulating film is in direct contact with the plug. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the plug is in direct contact with the one of the plurality of wirings. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the plug includes: a first layer containing tungsten that is in direct contact with the second insulating film, and a second layer that is in direct contact with an inner surface of the first layer in the opening. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the first layer is in direct contact with the one of the plurality of wirings. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein at least a part of the plug extends into the layer including the plurality of wirings. ### Claim 11 A semiconductor device, comprising: a logic circuit chip including: a first substrate; and a logic circuit on the first substrate; and a semiconductor memory array chip that is overlaid on and coupled to the logic circuit chip, and including: a second substrate; a wiring layer including a plurality of wirings that are on the second substrate, each of the plurality of wirings containing copper and extending along a surface plane of the second substrate in a first direction, and the plurality of wirings being arranged along the surface plane of the second substrate in a second direction different from the first direction; a first insulating film below the wiring layer; a plug extending through the first insulating film in a third direction crossing the first and second directions and electrically connected to one of the plurality of wirings, the plug containing tungsten; and a second insulating film provided between the first insulating film and the plug, wherein the logic circuit, the layer including the plurality of wirings, the first insulating film, the plug, and the second insulating film are between the first substrate and the second substrate. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the semiconductor memory array chip includes a semiconductor memory array between the second substrate and the layer including the plurality of wirings. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the second insulating film contains aluminum and oxygen. ### Claim 14 (depends on 11) The semiconductor device according to claim 11, wherein the second insulating film contains silicon and oxygen. ### Claim 15 (depends on 11) The semiconductor device according to claim 11, wherein at least a part of the plug extends into the layer including the plurality of wirings. ### Claim 16 A method for manufacturing a semiconductor device, the method comprising: forming a logic circuit on a first substrate; forming a layer including a plurality of wirings on a second substrate, such that each of the plurality of wirings extends along a surface plane of the second substrate in a first direction and that the plurality of wirings is arranged along the surface plane of the second substrate in a second direction different from the first direction, the each of the plurality of wirings containing copper; forming a first insulating film on the layer including the plurality of wirings; forming, in the first insulating film, an opening that extends along a depth direction of the second substrate in a third direction, at least partially on one of the plurality of wirings; forming a second insulating film in the opening; after the second insulating film is formed, forming a plug in the opening, such that the plug extends in the third direction in the opening and is electrically connected to the one of the plurality of wirings, the plug containing tungsten; and bonding a first side of the first substrate on which the logic circuit is formed and a second side of the second substrate on which the layer including the plurality of wirings, the first insulating film, the second insulating film, and the plug are formed. ### Claim 17 (depends on 16) The method according to claim 16, wherein the second insulating film contains aluminum and oxygen. ### Claim 18 (depends on 16) The method according to claim 16, wherein the second insulating film contains silicon and oxygen. ### Claim 19 (depends on 16) The method according to claim 16, wherein the second insulating film is formed on an inner wall of the opening such that a surface of the one of the plurality of wirings is exposed. ### Claim 20 (depends on 19) The method according to claim 19, wherein said forming the second insulating film comprises: forming the second insulating film on the inner wall of the opening and on the surface of the one of the plurality of wirings; and removing a part of the formed second insulating film such that the surface of the one of the plurality of wirings is exposed, wherein the plug is formed on the exposed surface of the one of the plurality of wirings.