# US 2021/0082934 A1 · Semiconductor storage device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082934 A1 - Document ID: US20210082934A1 - Status: Published application - Kind: A1 - Application number: 16/807,741 - Filed: 2020-03-03 - Published: 2021-03-18 - Earliest claimed: 2019-09-18 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Toshiyuki IWAMOTO - Web page: https://patentgrep.com/patent/US20210082934A1 ## CPC - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 62/405: {Orientations of crystalline planes} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract According to one embodiment, a semiconductor storage device includes: a single-crystal semiconductor substrate having a recessed surface; an under layer provided above the semiconductor substrate; a stacked body, provided over the under layer, that includes at least one conductive layer and at least one insulating layer alternately stacked on top of one another; a single-crystal semiconductor layer extending in a first direction perpendicular to the semiconductor substrate, penetrating the stacked body, and including a first end in contact with the recessed surface of the semiconductor substrate; and a memory film provided between the semiconductor layer and the at least one conductive layer. A crystal orientation of the semiconductor layer and a crystal orientation of the semiconductor substrate are the same. ## Claims ### Claim 1 A semiconductor storage device, comprising: a single-crystal semiconductor substrate, the semiconductor substrate having a recessed surface; an under layer provided over the semiconductor substrate; a stacked body, provided over the under layer, that includes at least one conductive layer and at least one insulating layer alternately stacked on top of one another; a single-crystal semiconductor layer extending in a first direction perpendicular to the semiconductor substrate, penetrating the stacked body, and including a first end in contact with the recessed surface of the semiconductor substrate; and a memory film provided between the semiconductor layer and the at least one conductive layer, wherein a crystal orientation of the semiconductor layer and a crystal orientation of the semiconductor substrate are the same. ### Claim 2 (depends on 1) The semiconductor storage device according to claim 1, wherein the semiconductor layer includes: a first single-crystal semiconductor layer including the first end in contact with the recessed surface of the semiconductor substrate, and a second end located in the under layer; and a second single-crystal semiconductor layer including a first end in contact with the second end of the first single-crystal semiconductor layer, the second single-crystal semiconductor layer and the conductive layer forming at least a portion of a memory cell. ### Claim 3 (depends on 2) The semiconductor storage device according to claim 2, wherein an impurity concentration of the first single-crystal semiconductor layer is higher than an impurity concentration of the second single-crystal semiconductor layer. ### Claim 4 (depends on 2) The semiconductor storage device according to claim 2, wherein an impurity concentration of a first portion of the second single-crystal semiconductor layer adjacent to an interface between the second single-crystal semiconductor layer and the first single-crystal semiconductor layer is higher than an impurity concentration of a second portion of the second single-crystal semiconductor layer adjacent to the memory cell. ### Claim 5 (depends on 3) The semiconductor storage device according to claim 3, wherein the impurity contains boron. ### Claim 6 (depends on 2) The semiconductor storage device according to claim 2, wherein the second single-crystal semiconductor layer extends in the first direction. ### Claim 7 (depends on 2) The semiconductor storage device according to claim 2, wherein the semiconductor layer further includes: a third single-crystal semiconductor layer having an end in contact with the second single-crystal semiconductor layer. ### Claim 8 (depends on 1) The semiconductor storage device according to claim 1, further comprising: a select gate line provided between the under layer and the at least one conductive layer next to the semiconductor substrate. ### Claim 9 A semiconductor storage device, comprising: a single-crystal semiconductor substrate; an interlayer insulating layer provided over the semiconductor substrate; a wiring layer including a single-crystal layer provided over the interlayer insulating layer; an under layer provided over the interlayer insulating layer; a stacked body, provided over the under layer, that includes at least one conductive layer and at least one insulating layer alternately stacked on top of one another; a single-crystal semiconductor layer extending in a first direction perpendicular to the semiconductor substrate, penetrating the stacked body, and including a first end in contact with the wiring layer; and a memory film provided between the conductive layer and the semiconductor layer, wherein a crystal orientation of the semiconductor layer and a crystal orientation of the single-crystal layer are the same. ### Claim 10 (depends on 9) The semiconductor storage device according to claim 9, further comprising: a catalyst layer, provided over the interlayer insulating layer, that contains a metal catalyst in contact with the wiring layer. ### Claim 11 (depends on 10) The semiconductor storage device according to claim 10, wherein a concentration of a metal catalyst in the semiconductor layer is lower than a concentration of a metal catalyst in the single-crystal layer. ### Claim 12 (depends on 10) The semiconductor storage device according to claim 10, wherein the single-crystal layer includes: a first single-crystal layer spaced from the catalyst layer and in contact with the semiconductor layer; and a second single-crystal layer spaced from the first single-crystal layer and in contact with the catalyst layer. ### Claim 13 (depends on 12) The semiconductor storage device according to claim 12, wherein the semiconductor layer contains hydrogen, and a hydrogen concentration of the semiconductor layer is higher than a hydrogen concentration of the semiconductor substrate. ### Claim 14 (depends on 9) The semiconductor storage device according to claim 9, wherein an impurity concentration of the wiring layer is higher than an impurity concentration of the semiconductor layer. ### Claim 15 (depends on 14) The semiconductor storage device according to claim 14, wherein the impurity contains boron. ### Claim 16 (depends on 9) The semiconductor storage device according to claim 9, further comprising: a select gate line provided between the under layer and the conductive layer closest to the interlayer insulating layer. ### Claim 17 (depends on 9) The semiconductor storage device according to claim 9, wherein the memory film includes a block insulating film, and the block insulating film is in contact with the wiring layer. ### Claim 18 (depends on 9) The semiconductor storage device according to claim 9, wherein the wiring layer intersects with the first direction and extends in a second direction parallel to the surface of the semiconductor substrate. ### Claim 19 (depends on 1) The semiconductor storage device according to claim 1, wherein the semiconductor layer contains hydrogen, and a hydrogen concentration of the single-crystal semiconductor layer is higher than a hydrogen concentration of the semiconductor substrate.