# US 2021/0082926 A1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2021/0082926 A1 - Document ID: US20210082926A1 - Status: Published application - Kind: A1 - Application number: 16/813,060 - Filed: 2020-03-09 - Published: 2021-03-18 - Earliest claimed: 2019-09-17 - Assignees: Kioxia Corporation - Applicants: Kioxia Corporation - Inventors: Takayuki KAKEGAWA; Shinya Naito - Web page: https://patentgrep.com/patent/US20210082926A1 ## CPC - H10B 43/35: with cell select transistors, e.g. NAND - H10B 41/27: the channels comprising vertical portions, e.g. U-shaped channels - H10B 41/35: with a cell select transistor, e.g. NAND - H10B 43/10: characterised by the top-view layout - H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels - H10D 62/371: {Inactive supplementary semiconductor regions, e.g. for preventing punch-through, improving capacity effect or leakage current} - H10P 30/204: {into Group IV semiconductors} - H10P 30/208: {of electrically inactive species} - H10P 30/212: {Through-implantation} - H10P 95/90: Thermal treatments, e.g. annealing or sintering - H10W 15/00: Highly-doped buried regions of integrated devices - H10W 15/01: {Manufacture or treatment} - H10B: ELECTRONIC MEMORY DEVICES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract According to an embodiment, a semiconductor device has a first and second region, and a semiconductor channel. The first region includes a peak of a concentration profile of a first impurity of a first conductivity type. The first region extends from a surface of the substrate, through a depth range including the concentration profile of a second impurity of a second conductivity type, to a depth of an intersection of the concentration profile of the first impurity and the concentration profile of the second impurity. The second region includes a concentration profile of a third impurity, and the second region overlaps at least part of the first region. The concentration profile of the third impurity is higher in concentration than the concentration profile of the first impurity throughout a depth direction of the second region. One end of the semiconductor channel reaches the first and second region. ## Claims ### Claim 1 A semiconductor device comprising: a stacked body disposed above a substrate and in which a plurality of conductive films are interspatially arranged in a layering direction; a first region disposed in the substrate and including a peak of a concentration profile of a first impurity of a first conductivity type, the first region extending from a surface of the substrate, through a depth range including a concentration profile of a second impurity of a second conductivity type higher in concentration than the concentration profile of the first impurity having the peak, to a depth of an intersection of the concentration profile of the first impurity having the peak and the concentration profile of the second impurity; a second region disposed in the substrate and including a concentration profile of a third impurity, the second region overlapping at least part of the first region in the layering direction, the concentration profile of the third impurity being higher in concentration than the concentration profile of the first impurity throughout a depth direction of the second region; and a semiconductor channel penetrating the stacked body in the layering direction and one end thereof reaches the first region and the second region. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the second region includes a peak of the concentration profile of the third impurity and overlaps the first region throughout a depth direction of the first region. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the second region includes a peak of the concentration profile of the third impurity and overlaps the first region on a side of the surface of the substrate in a depth direction of the first region. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the second region includes a peak of the concentration profile of the third impurity and overlaps the first region on a side of the intersection in a depth direction of the first region. ### Claim 5 (depends on 1) The semiconductor device according to claim 1, wherein a peak of the concentration profile of the third impurity is higher in concentration than the peak of the concentration profile of the first impurity. ### Claim 6 (depends on 5) The semiconductor device according to claim 5, wherein the peak of the concentration profile of the third impurity is higher in concentration than the peak of the concentration profile of the first impurity by one digit or more in a unit of atoms/cm3. ### Claim 7 (depends on 6) The semiconductor device according to claim 6, wherein the peak of the concentration profile of the first impurity has a concentration of 5×1016 atoms/cm3 or higher and 1×1019 atoms/cm3 or lower, and the peak of the concentration profile of the third impurity has a concentration of 1×1019 atoms/cm3 or higher. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the second region includes a peak of the concentration profile of the third impurity, the first region and the second region each extend in a substrate planar direction, and the concentration profile of the first impurity having the peak in the first region and the concentration profile of the third impurity having the peak in the second region are included in the first region near the semiconductor channel. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein the concentration profile of the second impurity, which is higher in concentration than the concentration profile of the first impurity, is not included in the first region near the semiconductor channel and is included in the first region apart from the semiconductor channel. ### Claim 10 (depends on 1) The semiconductor device according to claim 1, wherein the first impurity includes boron, the second impurity includes arsenic, and the third impurity includes carbon. ### Claim 11 A semiconductor device comprising: a first stacked body disposed above a substrate and in which a plurality of conductive films extending in a first direction are interspatially arranged in a layering direction; a first separating member adjacent to, in a second direction intersecting the first direction, a first end of the first stacked body in the second direction, the first separating member extending in the first direction; a second separating member adjacent to, in the second direction, a second end of the first stacked body in the second direction, the second separating member extending in the first direction; a plurality of semiconductor channels each of which penetrates the first stacked body in the layering direction and couples to the substrate; a first region disposed in the substrate and including a first peak of a concentration profile of a first impurity of a first conductivity type, the first region extending from a surface of the substrate, through a depth range including a concentration profile of a second impurity of a second conductivity type higher in concentration than the concentration profile of the first impurity having the first peak, to a depth of an intersection of the concentration profile of the first impurity having the first peak and the concentration profile of the second impurity; and a second region disposed in the substrate and including a second peak of a concentration profile of a third impurity, the second region overlapping at least part of the first region in the layering direction, the concentration profile of the third impurity having the second peak being higher in concentration than the concentration profile of the first impurity through a depth direction of the second region, wherein the first region and the second region each extend in a substrate planer direction, and the second peak of the concentration profile of the third impurity in the second region which overlaps at least the part of the first region is formed within the substrate between the plurality of semiconductor channels in the substrate planer direction. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the first region and the second region are coupled to side surfaces of the plurality of semiconductor channels respectively. ### Claim 13 (depends on 11) The semiconductor device according to claim 11, wherein the concentration profile of the second impurity is not included in the first region between the plurality of semiconductor channels in the substrate planar direction. ### Claim 14 (depends on 11) The semiconductor device according to claim 11, wherein at least one of the first separating member and the second separating member has: an electrode member extending in the first direction and having a lower end reaching the first region; and an insulating member disposed between the electrode member and the plurality of conductive films, and the concentration profile of the second impurity in the first region is locally included in the substrate planer direction including a substrate portion below the electrode member. ### Claim 15 (depends on 11) The semiconductor device according to claim 11, further comprising a second stacked body disposed above the substrate and in which a plurality of conductive films extending in the first direction are interspatially arranged in the layering direction, wherein one of the first separating member and the second separating member is disposed between the first stacked body and the second stacked body. ### Claim 16 (depends on 11) The semiconductor device according to claim 11, wherein the second region overlaps the first region throughout a depth direction of the first region. ### Claim 17 (depends on 11) The semiconductor device according to claim 11, wherein the second region overlaps the first region on a side of the surface of the substrate in a depth direction of the first region ### Claim 18 (depends on 11) The semiconductor device according to claim 11, wherein the second region overlaps the first region on a side of the intersection in a depth direction of the first region. ### Claim 19 (depends on 11) The semiconductor device according to claim 11, wherein the first impurity includes boron, the second impurity includes arsenic, and the third impurity includes carbon. ### Claim 20 (depends on 11) The semiconductor device according to claim 11, wherein the plurality of semiconductor channels reach the first region and the second region.