# US 2021/0082925 A1 · Finfet having non-merging epitaxially grown source/drains

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- Number: US 2021/0082925 A1
- Document ID: US20210082925A1
- Status: Published application
- Kind: A1
- Application number: 17/106,457
- Filed: 2020-11-30
- Published: 2021-03-18
- Earliest claimed: 2018-03-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Chun Po Chang; Chen-Ming Lee; Fu-Kai Yang; Mei-Yun Wang; Wei-Yang Lee; Tzu-Hsiang Hsu
- Web page: https://patentgrep.com/patent/US20210082925A1

## CPC

- H10B 10/12: {comprising a MOSFET load element}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 30/0243: {using dummy structures having essentially the same shapes as the semiconductor bodies, e.g. to provide stability}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D 30/6215: {having multiple independently-addressable gate electrodes}
- H10D 62/115: {Dielectric isolations, e.g. air gaps}
- H10D 62/151: {of IGFETs (of IGFETs having LDD or DDD structure H10D30/601; of thin film transistors H10D30/6713)}
- H10D 84/0193: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/853: {comprising FinFETs}
- H10D 89/10: Integrated device layouts
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

A semiconductor device includes a layer having a semiconductive material. The layer includes an outwardly-protruding fin structure. An isolation structure is disposed over the layer but not over the fin structure. A first spacer and a second spacer are each disposed over the isolation structure and on sidewalls of the fin structure. The first spacer is disposed on a first sidewall of the fin structure. The second spacer is disposed on a second sidewall of the fin structure opposite the first sidewall. The second spacer is substantially taller than the first spacer. An epi-layer is grown on the fin structure. The epi-layer protrudes laterally. A lateral protrusion of the epi-layer is asymmetrical with respect to the first side and the second side.

## Claims

### Claim 1

A method, comprising:
providing a semiconductor structure having a first fin structure and a spacer layer disposed on a first sidewall and a second sidewall of the first fin structure;
forming a patterned photoresist layer over a first portion of the spacer layer disposed on the second sidewall of the first fin structure;
etching the first fin structure and a second portion of the spacer layer disposed on the first sidewall of the first fin structure using the patterned photoresist layer as an etch mask; and
after the etching, epitaxially growing a source/drain layer on the first fin structure, wherein the source/drain layer protrudes more over the second portion of the spacer layer than over the first portion of the spacer layer.

### Claim 2 (depends on 1)

The method of claim 1, wherein the spacer layer comprises:
a first spacer layer comprising a low-k dielectric material; and
a second spacer layer over the first spacer layer, the second spacer layer comprising silicon nitride.

### Claim 3 (depends on 1)

The method of claim 1, wherein, after the etching, a height of the first portion of the first fin structure is greater than a height of the second portion of the first fin structure.

### Claim 4 (depends on 1)

The method of claim 1,
wherein the semiconductor structure further comprises a second fin structure alongside the first fin structure, a distance between the second portion of the spacer layer and the second fin structure being greater than a distance between the first portion of the spacer layer and the second fin structure,
wherein the source/drain layer comprises a first surface closer to the second fin structure and a second surface away from the second fin structure,
wherein a profile of the first surface is different from a profile of the second surface.

### Claim 5 (depends on 4)

The method of claim 4,
wherein the first surface is substantially straight,
wherein the second surface comprises a protrusion.

### Claim 6 (depends on 1)

The method of claim 1, wherein the source/drain layer comprises silicon, germanium and a p-type dopant.

### Claim 7 (depends on 1)

The method of claim 1, further comprising:
before the epitaxially growing, removing the patterned photoresist layer.

### Claim 8 (depends on 1)

The method of claim 1, further comprising:
after the removing of the patterned photoresist layer, performing a cleaning process to remove contaminants from the first fin structure.

### Claim 9

A method comprising:
providing a semiconductor structure having a first fin, a second fin, a spacer layer, the spacer layer comprising a first outer portion disposed on a sidewall of the first fin, a second outer portion disposed on a sidewall of the second fin, and an inner portion disposed between the first fin and the second fin;
forming a patterned photoresist layer over the inner portion to expose the first outer portion, the first fin, the second outer portion, and the second fin;
recessing the first fin, the second fin, the first outer portion, and the second outer portion while the inner portion is protected by the patterned photoresist layer;
cleaning the recessed first fin and the recessed second fin; and
epitaxially growing a first source/drain layer on the first fin and a second source/drain layer on the second fin,
wherein each of the first source/drain layer and the second source/drain layer comprises an asymmetric cross-sectional profile,
wherein the first source/drain layer mirrors the second source/drain layer.

### Claim 10 (depends on 9)

The method of claim 9, wherein the spacer layer comprises:
a first spacer layer; and
a second spacer layer over the first spacer layer,
wherein a composition of the first spacer layer is different from a composition of the second spacer layer.

### Claim 11 (depends on 10)

The method of claim 10, further comprising:
after the epitaxially growing, selectively removing the second spacer layer while the first spacer layer is substantially unetched.

### Claim 12 (depends on 11)

The method of claim 11, wherein the selectively removing comprises use of phosphoric acid.

### Claim 13 (depends on 11)

The method of claim 11, further comprising:
after the selectively removing of the second spacer layer, forming an isolation structure over the first spacer layer in the inner portion.

### Claim 14 (depends on 9)

The method of claim 9, wherein the recessing comprises:
performing a first etching process to etch the first fin and the second fin; and
performing a second etching process to etch the first outer portion and the second outer portion.

### Claim 15 (depends on 9)

The method of claim 9,
wherein the first source/drain layer comprises a first protrusion pointing away from the second fin,
wherein the second source/drain layer comprises a second protrusion pointing away from the first fin.

### Claim 16

A method, comprising:
providing a semiconductor device having a first fin structure and a second fin structure that each protrude vertically upwards out of a semiconductive layer, wherein a spacer layer is formed on sidewalls of the first fin structure and the second fin structure;
forming a patterned photoresist layer over the semiconductor device, wherein the patterned photoresist layer includes a first opening exposing the first fin structure and a second opening exposing the second fin structure, and wherein a portion of the patterned photoresist layer is formed to cover up segments of the spacer layer located between the first fin structure and the second fin structure;
performing one or more etching processes through the first opening and the second opening, wherein the portion of the patterned photoresist layer protects the segments of the spacer layer underneath from being etched;
removing the patterned photoresist layer after the one or more etching processes are performed; and
epitaxially growing source/drain layers on the first fin structure and the second fin structure, wherein the segments of the spacer layer prevent a lateral growth of the source/drain layers toward each other.

### Claim 17 (depends on 16)

The method of claim 16, wherein the epitaxially growing comprises epitaxially growing source/drain layers of FinFET transistors of an SRAM device.

### Claim 18 (depends on 17)

The method of claim 17, wherein the epitaxially growing comprises epitaxially growing source/drain layers of p-type FinFET transistors.

### Claim 19 (depends on 16)

The method of claim 16, wherein the epitaxially growing is performed such that the source/drain layers of the first fin structure and the second fin structure protrude laterally away from each other.

### Claim 20 (depends on 16)

The method of claim 16, wherein the epitaxially growing is performed such that the source/drain layers of the first fin structure and the second fin structure each have an asymmetrical shape.