# US 2021/0082829 A1 · Graphene Barrier Layer

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- Number: US 2021/0082829 A1
- Document ID: US20210082829A1
- Status: Published application
- Kind: A1
- Application number: 16/571,279
- Filed: 2019-09-16
- Published: 2021-03-18
- Earliest claimed: 2019-09-16
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Shin-Yi Yang; Ming-Han Lee; Shau-Lin Shue
- Web page: https://patentgrep.com/patent/US20210082829A1

## CPC

- H10W 20/033: {in openings in dielectrics}
- H10W 20/425: {Barrier, adhesion or liner layers}
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10W 20/039: {also covering sidewalls of the conductive structures}
- H10W 20/045: {for deposition from the gaseous phase, e.g. for chemical vapour deposition [CVD]}
- H10W 20/055: {by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition}
- H10W 20/42: Vias, e.g. via plugs
- H10W 20/4403: {based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence)}
- H10W 20/4437: {the principal metal being a transition metal}
- H10W 20/063: {by forming conductive members before forming protective insulating material}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

Interconnect structures and method of forming the same are disclosed herein. An exemplary interconnect structure includes a first contact feature in a first dielectric layer, a second dielectric layer over the first dielectric layer, a third dielectric layer over the second dielectric layer, a second contact feature extending through the second dielectric layer and the third dielectric layer, and a graphene layer between the second contact feature and the third dielectric layer.

## Claims

### Claim 1

An interconnect structure comprising:
a first contact feature in a first dielectric layer;
a second dielectric layer over the first dielectric layer;
a third dielectric layer over the second dielectric layer;
a second contact feature extending through the second dielectric layer and the third dielectric layer; and
a graphene layer between the second contact feature and the third dielectric layer.

### Claim 2 (depends on 1)

The interconnect structure of claim 1,
wherein the second contact feature comprises a contact via portion and a metal line portion,
wherein the contact via portion of the second contact feature is disposed within the second dielectric layer,
wherein the metal line portion of the second contact feature is disposed within the third dielectric layer.

### Claim 3 (depends on 1)

The interconnect structure of claim 1, wherein the second contact feature is formed of a seed metal that includes a catalytic surface for graphene formation.

### Claim 4 (depends on 1)

The interconnect structure of claim 1, wherein the second contact feature comprises nickel, cobalt, iron, copper, or cupronickel.

### Claim 5 (depends on 1)

The interconnect structure of claim 1, further comprising carbon atoms disposed in grain boundaries of the second contact feature.

### Claim 6 (depends on 1)

The interconnect structure of claim 1, wherein an interface between the second dielectric layer and the third dielectric layer is free of the graphene layer.

### Claim 7 (depends on 1)

The interconnect structure of claim 1, further comprising an etch stop layer disposed between the first dielectric layer and the second dielectric layer,
wherein the graphene layer is disposed between the second contact feature and the etch stop layer.

### Claim 8 (depends on 1)

The interconnect structure of claim 1, wherein the graphene layer comprises a thickness between about 3 Å and about 20 Å.

### Claim 9

An interconnect structure comprising:
a first contact feature in a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer over the etch stop layer;
a second contact feature extending through the second dielectric layer and electrically coupled to the first contact feature; and
a carbon layer between and in contact with the second contact feature and the first contact feature.

### Claim 10 (depends on 9)

The interconnect structure of claim 9, wherein the carbon layer comprises a graphene layer.

### Claim 11 (depends on 9)

The interconnect structure of claim 9, wherein the second contact feature is substantially free of carbon atoms.

### Claim 12 (depends on 9)

The interconnect structure of claim 9,
wherein the carbon layer comprises a first portion disposed between the second contact feature and the second dielectric layer and a second portion disposed between the second contact feature and the first contact feature,
wherein the first portion comprises a first thickness and the second portion comprises a second thickness smaller than the first thickness.

### Claim 13 (depends on 9)

The interconnect structure of claim 9, wherein a dielectric constant of the etch stop layer is greater than dielectric constants of the first and second dielectric layers.

### Claim 14 (depends on 9)

The interconnect structure of claim 9, wherein the second contact feature comprises nickel, cobalt, iron, copper, or cupronickel.

### Claim at position 15

15-20. (canceled)

### Claim 21

An interconnect structure comprising:
a first contact feature in a first dielectric layer;
an etch stop layer over the first dielectric layer;
a second dielectric layer over the etch stop layer;
a third dielectric layer over the second dielectric layer;
a second contact feature extending through the third dielectric layer, the second dielectric layer, and the etch stop layer and electrically coupled to the first contact feature; and
a carbon layer between and in contact with the second contact feature and the third dielectric layer.

### Claim 22 (depends on 21)

The interconnect structure of claim 21, wherein the carbon layer comprises a graphene layer.

### Claim 23 (depends on 21)

The interconnect structure of claim 21, wherein the carbon layer is further disposed between and in contact with the second contact feature and the second dielectric layer.

### Claim 24 (depends on 21)

The interconnect structure of claim 21, wherein the carbon layer is further disposed between and in contact with the second contact feature and the etch stop layer.

### Claim 25 (depends on 21)

The interconnect structure of claim 21, wherein the carbon layer is further disposed between and in contact with the first contact feature and the second contact feature.

### Claim 26 (depends on 21)

The interconnect structure of claim 21, wherein the second contact feature is spaced apart from the second dielectric layer by the carbon layer.